Dose-dependence of ion implantation-caused damage in silicon measured by ellipsometry and backscattering spectrometry

M. Fried, P. Petrik, T. Lohner, N. Q. Khánh, O. Polgár, J. Gyulai

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

100 keV Ar and Xe ions, as well as 40 and 60 keV Ge ions were implanted at room temperature into single-crystalline silicon. The used doses covered the range from slightly damaged to totally amorphized layers for the Xe, Ar and Ge ions, respectively. The relative damage was characterized using spectroscopic ellipsometry (SE) with the Bruggeman effective medium approximation combining the dielectric function of single-crystalline and ion implantation-amorphized silicon. The depth distribution of damage was described by the coupled half-Gaussian model and with an improved model, which describes the damage profile using sublayers with thicknesses inversely proportional to the slope of the profile. The SE results were cross-checked using Rutherford backscattering spectrometry (RBS). The damage peaks were determined from the SE and RBS measurements for different ions and different doses ranging from slight damage to total damage. Comparing the damage peaks (caused by the same doses) determined with SE and RBS, a systematic deviation can be observed: SE measures more damage than RBS for lower and less damage than RBS for higher doses.

Original languageEnglish
Pages (from-to)404-409
Number of pages6
JournalThin Solid Films
Volume455-456
DOIs
Publication statusPublished - May 1 2004

Fingerprint

Spectroscopic ellipsometry
Ellipsometry
Rutherford backscattering spectroscopy
Silicon
Backscattering
Ion implantation
Spectrometry
ellipsometry
ion implantation
backscattering
damage
dosage
Ions
silicon
spectroscopy
Crystalline materials
ions
profiles
implantation
slopes

Keywords

  • Channeling
  • Ellipsometry
  • Ion backscattering
  • Ion implantation
  • Silicon

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Dose-dependence of ion implantation-caused damage in silicon measured by ellipsometry and backscattering spectrometry. / Fried, M.; Petrik, P.; Lohner, T.; Khánh, N. Q.; Polgár, O.; Gyulai, J.

In: Thin Solid Films, Vol. 455-456, 01.05.2004, p. 404-409.

Research output: Contribution to journalArticle

@article{74b5b601e30a44a68a06370d8a2fbeed,
title = "Dose-dependence of ion implantation-caused damage in silicon measured by ellipsometry and backscattering spectrometry",
abstract = "100 keV Ar and Xe ions, as well as 40 and 60 keV Ge ions were implanted at room temperature into single-crystalline silicon. The used doses covered the range from slightly damaged to totally amorphized layers for the Xe, Ar and Ge ions, respectively. The relative damage was characterized using spectroscopic ellipsometry (SE) with the Bruggeman effective medium approximation combining the dielectric function of single-crystalline and ion implantation-amorphized silicon. The depth distribution of damage was described by the coupled half-Gaussian model and with an improved model, which describes the damage profile using sublayers with thicknesses inversely proportional to the slope of the profile. The SE results were cross-checked using Rutherford backscattering spectrometry (RBS). The damage peaks were determined from the SE and RBS measurements for different ions and different doses ranging from slight damage to total damage. Comparing the damage peaks (caused by the same doses) determined with SE and RBS, a systematic deviation can be observed: SE measures more damage than RBS for lower and less damage than RBS for higher doses.",
keywords = "Channeling, Ellipsometry, Ion backscattering, Ion implantation, Silicon",
author = "M. Fried and P. Petrik and T. Lohner and Kh{\'a}nh, {N. Q.} and O. Polg{\'a}r and J. Gyulai",
year = "2004",
month = "5",
day = "1",
doi = "10.1016/j.tsf.2004.01.027",
language = "English",
volume = "455-456",
pages = "404--409",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

TY - JOUR

T1 - Dose-dependence of ion implantation-caused damage in silicon measured by ellipsometry and backscattering spectrometry

AU - Fried, M.

AU - Petrik, P.

AU - Lohner, T.

AU - Khánh, N. Q.

AU - Polgár, O.

AU - Gyulai, J.

PY - 2004/5/1

Y1 - 2004/5/1

N2 - 100 keV Ar and Xe ions, as well as 40 and 60 keV Ge ions were implanted at room temperature into single-crystalline silicon. The used doses covered the range from slightly damaged to totally amorphized layers for the Xe, Ar and Ge ions, respectively. The relative damage was characterized using spectroscopic ellipsometry (SE) with the Bruggeman effective medium approximation combining the dielectric function of single-crystalline and ion implantation-amorphized silicon. The depth distribution of damage was described by the coupled half-Gaussian model and with an improved model, which describes the damage profile using sublayers with thicknesses inversely proportional to the slope of the profile. The SE results were cross-checked using Rutherford backscattering spectrometry (RBS). The damage peaks were determined from the SE and RBS measurements for different ions and different doses ranging from slight damage to total damage. Comparing the damage peaks (caused by the same doses) determined with SE and RBS, a systematic deviation can be observed: SE measures more damage than RBS for lower and less damage than RBS for higher doses.

AB - 100 keV Ar and Xe ions, as well as 40 and 60 keV Ge ions were implanted at room temperature into single-crystalline silicon. The used doses covered the range from slightly damaged to totally amorphized layers for the Xe, Ar and Ge ions, respectively. The relative damage was characterized using spectroscopic ellipsometry (SE) with the Bruggeman effective medium approximation combining the dielectric function of single-crystalline and ion implantation-amorphized silicon. The depth distribution of damage was described by the coupled half-Gaussian model and with an improved model, which describes the damage profile using sublayers with thicknesses inversely proportional to the slope of the profile. The SE results were cross-checked using Rutherford backscattering spectrometry (RBS). The damage peaks were determined from the SE and RBS measurements for different ions and different doses ranging from slight damage to total damage. Comparing the damage peaks (caused by the same doses) determined with SE and RBS, a systematic deviation can be observed: SE measures more damage than RBS for lower and less damage than RBS for higher doses.

KW - Channeling

KW - Ellipsometry

KW - Ion backscattering

KW - Ion implantation

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=17144471681&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17144471681&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2004.01.027

DO - 10.1016/j.tsf.2004.01.027

M3 - Article

VL - 455-456

SP - 404

EP - 409

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -