Doping of phosphorus in chemical-vapor-deposited silicon carbide layers

A theoretical study

T. Hornos, A. Gali, R. P. Devaty, W. J. Choyke

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Ab initio supercell calculations have been carried out to investigate the doping of phosphorus in chemical-vapor-deposited (CVD) silicon carbide (SiC) layers. We simulated the CVD conditions by using the appropriate chemical potentials for hydrogen and phosphorus (P). We find that the site selection of P is not affected by the presence of hydrogen, and hydrogen does not practically passivate the P donors. We find that the most abundant defect is P at the Si-site followed by P at the C-site. The calculated concentrations of the P donors and free carriers in CVD grown SiC agree with the experimental findings.

Original languageEnglish
Article number212114
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number21
DOIs
Publication statusPublished - 2005

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silicon carbides
phosphorus
vapors
hydrogen
site selection
defects

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Doping of phosphorus in chemical-vapor-deposited silicon carbide layers : A theoretical study. / Hornos, T.; Gali, A.; Devaty, R. P.; Choyke, W. J.

In: Applied Physics Letters, Vol. 87, No. 21, 212114, 2005, p. 1-3.

Research output: Contribution to journalArticle

Hornos, T. ; Gali, A. ; Devaty, R. P. ; Choyke, W. J. / Doping of phosphorus in chemical-vapor-deposited silicon carbide layers : A theoretical study. In: Applied Physics Letters. 2005 ; Vol. 87, No. 21. pp. 1-3.
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