Doping of phosphorus in chemical-vapor-deposited silicon carbide layers: A theoretical study

T. Hornos, A. Gali, R. P. Devaty, W. J. Choyke

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2 Citations (Scopus)

Abstract

Ab initio supercell calculations have been carried out to investigate the doping of phosphorus in chemical-vapor-deposited (CVD) silicon carbide (SiC) layers. We simulated the CVD conditions by using the appropriate chemical potentials for hydrogen and phosphorus (P). We find that the site selection of P is not affected by the presence of hydrogen, and hydrogen does not practically passivate the P donors. We find that the most abundant defect is P at the Si-site followed by P at the C-site. The calculated concentrations of the P donors and free carriers in CVD grown SiC agree with the experimental findings.

Original languageEnglish
Article number212114
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number21
DOIs
Publication statusPublished - Nov 28 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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