Doping-induced charge redistribution in the high-temperature superconductor (formula presented)

C. Ambrosch-Draxl, P. Süle, H. Auer, E. Ya Sherman

Research output: Contribution to journalArticle

Abstract

To understand the link between doping and electronic properties in high-temperature superconductors, we report first-principles calculations on the oxygen doping effect for the single-layer cuprate (formula presented) We find ionic behavior of the dopant atom up to (formula presented) The excess oxygen attracts electrons from the (formula presented) plane leading to an increase of the hole concentration in this building block. The maximum amount of holes is reached when the dopant oxygen shell is closed. All theoretical findings are in excellent agreement with experimental observations. We propose that this doping behavior may be a characteristic feature of high-temperature superconductors with the filling of the dopant oxygen shell to be a limiting factor for the hole content in (formula presented) planes. Possible effects of the charge redistribution on (formula presented) are discussed.

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume67
Issue number10
DOIs
Publication statusPublished - Mar 21 2003

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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