Dopant redistribution in silicon enhanced by hundred MeV heavy ion irradiation

N. Dinu, I. V. Antonova, J. Gyulai, V. A. Skuratov, A. I. Oprea

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of low dose 710 MeV Bi and 305 MeV Kr ion irradiation on boron redistribution and electrical activation processes in silicon during furnace annealing have been studied. It was found that hundred MeV ion irradiation enhances the shift of boron depth distribution towards the depth of the material and significant decreases the electrical activation of dopants. The difference in dynamics of boron activation between reference and high energy heavy ion irradiated silicon samples is attributed to formation of stable defect dusters in ion track range.

Original languageEnglish
Title of host publicationProceedings of the International Conference on Ion Implantation Technology
Pages147-150
Number of pages4
DOIs
Publication statusPublished - 2000
Event2000 13th International Conference on Ion Implantation Technology, IIT 2000 - Alpbach, Austria
Duration: Sep 17 2000Sep 22 2000

Other

Other2000 13th International Conference on Ion Implantation Technology, IIT 2000
CountryAustria
CityAlpbach
Period9/17/009/22/00

Fingerprint

Heavy Ions
Boron
Silicon
Ion bombardment
ion irradiation
Heavy ions
heavy ions
boron
Chemical activation
Doping (additives)
activation
silicon
Dosimetry
furnaces
Furnaces
Annealing
Ions
dosage
Defects
annealing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Dinu, N., Antonova, I. V., Gyulai, J., Skuratov, V. A., & Oprea, A. I. (2000). Dopant redistribution in silicon enhanced by hundred MeV heavy ion irradiation. In Proceedings of the International Conference on Ion Implantation Technology (pp. 147-150). [924111] https://doi.org/10.1109/.2000.924111

Dopant redistribution in silicon enhanced by hundred MeV heavy ion irradiation. / Dinu, N.; Antonova, I. V.; Gyulai, J.; Skuratov, V. A.; Oprea, A. I.

Proceedings of the International Conference on Ion Implantation Technology. 2000. p. 147-150 924111.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dinu, N, Antonova, IV, Gyulai, J, Skuratov, VA & Oprea, AI 2000, Dopant redistribution in silicon enhanced by hundred MeV heavy ion irradiation. in Proceedings of the International Conference on Ion Implantation Technology., 924111, pp. 147-150, 2000 13th International Conference on Ion Implantation Technology, IIT 2000, Alpbach, Austria, 9/17/00. https://doi.org/10.1109/.2000.924111
Dinu N, Antonova IV, Gyulai J, Skuratov VA, Oprea AI. Dopant redistribution in silicon enhanced by hundred MeV heavy ion irradiation. In Proceedings of the International Conference on Ion Implantation Technology. 2000. p. 147-150. 924111 https://doi.org/10.1109/.2000.924111
Dinu, N. ; Antonova, I. V. ; Gyulai, J. ; Skuratov, V. A. ; Oprea, A. I. / Dopant redistribution in silicon enhanced by hundred MeV heavy ion irradiation. Proceedings of the International Conference on Ion Implantation Technology. 2000. pp. 147-150
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