DISTRIBUTION OF Cu IN Al-Cu SANDWICH LAYER AFTER ANNEALING.

G. Peto, E. Kotai

Research output: Contribution to journalConference article

Abstract

The sandwich layer was constructed of 0,5 nm Al and 4-24 nm Cu films. The distribution of the Cu was modified by an isothermal heat treatment. The profile of the Cu component was measured by Rutherford Backscattering (RBS) method with **4He** plus ion at 3 Mev energy. The diffusion process in this geometry and concentration range (0,5-10 at% Cu) consists of lattice, grain boundary and surface diffusion. This work is pertinent to microcircuit element fabrication.

Original languageEnglish
Pages (from-to)177-180
Number of pages4
JournalAnnual Proceedings - Reliability Physics (Symposium)
Volume1
Publication statusPublished - Jan 1 1980
EventUnknown conference - Cannes, Fr
Duration: Sep 22 1980Sep 26 1980

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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