Dissolution of thin TaV2 during annealing of Ta/TaV2/V tri-layer below the order-disorder temperature

A. Csík, S. S. Shenouda, Z. Erdélyi, D. Beke

Research output: Contribution to journalArticle

1 Citation (Scopus)


In this research, we provide first experimental evidence on the dissolution of a thin compound layer sandwiched between the parent materials when it is heated below the order-disorder temperature. The Ta(10 nm)/TaV2(6 nm)/V(30 nm) system, prepared by DC magnetron sputtering, has been chosen to prove the expected simulation results. The samples were investigated mainly by secondary neutral mass spectrometry. The about 6 nm thick TaV2 compound layer was dissolved by annealing at 1025 °C for 1 h. Then, it was reformed by increasing the annealing time to 2–3 h. These results prove our previous computer kinetic Monte Carlo and Kinetic mean field calculations. These findings are important for nanotechnologies utilizing early stages of solid state reactions.

Original languageEnglish
Pages (from-to)381-384
Number of pages4
JournalApplied Surface Science
Publication statusPublished - Feb 1 2019



  • Compound dissolution
  • Nano diffusion
  • Solid state reactions
  • Thin films

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

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