Dissolution of thin TaV2 during annealing of Ta/TaV2/V tri-layer below the order-disorder temperature

A. Csík, S. S. Shenouda, Z. Erdélyi, D. Beke

Research output: Contribution to journalArticle

Abstract

In this research, we provide first experimental evidence on the dissolution of a thin compound layer sandwiched between the parent materials when it is heated below the order-disorder temperature. The Ta(10 nm)/TaV2(6 nm)/V(30 nm) system, prepared by DC magnetron sputtering, has been chosen to prove the expected simulation results. The samples were investigated mainly by secondary neutral mass spectrometry. The about 6 nm thick TaV2 compound layer was dissolved by annealing at 1025 °C for 1 h. Then, it was reformed by increasing the annealing time to 2–3 h. These results prove our previous computer kinetic Monte Carlo and Kinetic mean field calculations. These findings are important for nanotechnologies utilizing early stages of solid state reactions.

LanguageEnglish
Pages381-384
Number of pages4
JournalApplied Surface Science
Volume466
DOIs
Publication statusPublished - Feb 1 2019

Fingerprint

Order disorder transitions
Dissolution
Annealing
Kinetics
Solid state reactions
Nanotechnology
Magnetron sputtering
Mass spectrometry
Temperature

Keywords

  • Compound dissolution
  • Nano diffusion
  • Solid state reactions
  • Thin films

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Dissolution of thin TaV2 during annealing of Ta/TaV2/V tri-layer below the order-disorder temperature. / Csík, A.; Shenouda, S. S.; Erdélyi, Z.; Beke, D.

In: Applied Surface Science, Vol. 466, 01.02.2019, p. 381-384.

Research output: Contribution to journalArticle

@article{a43568a0a99f4b0a8e3d85f7b4d9ef05,
title = "Dissolution of thin TaV2 during annealing of Ta/TaV2/V tri-layer below the order-disorder temperature",
abstract = "In this research, we provide first experimental evidence on the dissolution of a thin compound layer sandwiched between the parent materials when it is heated below the order-disorder temperature. The Ta(10 nm)/TaV2(6 nm)/V(30 nm) system, prepared by DC magnetron sputtering, has been chosen to prove the expected simulation results. The samples were investigated mainly by secondary neutral mass spectrometry. The about 6 nm thick TaV2 compound layer was dissolved by annealing at 1025 °C for 1 h. Then, it was reformed by increasing the annealing time to 2–3 h. These results prove our previous computer kinetic Monte Carlo and Kinetic mean field calculations. These findings are important for nanotechnologies utilizing early stages of solid state reactions.",
keywords = "Compound dissolution, Nano diffusion, Solid state reactions, Thin films",
author = "A. Cs{\'i}k and Shenouda, {S. S.} and Z. Erd{\'e}lyi and D. Beke",
year = "2019",
month = "2",
day = "1",
doi = "10.1016/j.apsusc.2018.10.013",
language = "English",
volume = "466",
pages = "381--384",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

TY - JOUR

T1 - Dissolution of thin TaV2 during annealing of Ta/TaV2/V tri-layer below the order-disorder temperature

AU - Csík, A.

AU - Shenouda, S. S.

AU - Erdélyi, Z.

AU - Beke, D.

PY - 2019/2/1

Y1 - 2019/2/1

N2 - In this research, we provide first experimental evidence on the dissolution of a thin compound layer sandwiched between the parent materials when it is heated below the order-disorder temperature. The Ta(10 nm)/TaV2(6 nm)/V(30 nm) system, prepared by DC magnetron sputtering, has been chosen to prove the expected simulation results. The samples were investigated mainly by secondary neutral mass spectrometry. The about 6 nm thick TaV2 compound layer was dissolved by annealing at 1025 °C for 1 h. Then, it was reformed by increasing the annealing time to 2–3 h. These results prove our previous computer kinetic Monte Carlo and Kinetic mean field calculations. These findings are important for nanotechnologies utilizing early stages of solid state reactions.

AB - In this research, we provide first experimental evidence on the dissolution of a thin compound layer sandwiched between the parent materials when it is heated below the order-disorder temperature. The Ta(10 nm)/TaV2(6 nm)/V(30 nm) system, prepared by DC magnetron sputtering, has been chosen to prove the expected simulation results. The samples were investigated mainly by secondary neutral mass spectrometry. The about 6 nm thick TaV2 compound layer was dissolved by annealing at 1025 °C for 1 h. Then, it was reformed by increasing the annealing time to 2–3 h. These results prove our previous computer kinetic Monte Carlo and Kinetic mean field calculations. These findings are important for nanotechnologies utilizing early stages of solid state reactions.

KW - Compound dissolution

KW - Nano diffusion

KW - Solid state reactions

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=85054582889&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85054582889&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2018.10.013

DO - 10.1016/j.apsusc.2018.10.013

M3 - Article

VL - 466

SP - 381

EP - 384

JO - Applied Surface Science

T2 - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -