Dissolution mechanism of the carbon islands at the SiO2/SiC interface

O. H. Krafcsik, K. V. Josepovits, P. Deák

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

During oxidation of SiC small graphitic carbon islands are known to form at the SiO2/SiC interface. The parameters influencing the stability of these islands are not known and due to the small size of the carbon islands it is extremely difficult to investigate this problem directly. Therefore we have deposited a graphitic amorphous carbon (a-C) layer onto high quality SiO2 and investigated the indiffusion of carbon into SiO2. We have found that if the oxygen contamination of the a-C layer is negligible, no carbon enters the oxide up to the highest temperature we investigated (1190°C). This means that in an oxygen-poor environment the carbon islands can not be dissolved at the usual temperature of SiC oxidation. We find however that if the a-C layer is prepared with oxygen contamination, carbon enters into SiO2 already at 1140°C. The outdiffusion of carbonaceous species (probably CO) is very fast at this temperature. Therefore, the stability of the carbon islands at the SiO2/SiC interface must be controlled by the availability of oxygen.

Original languageEnglish
Pages (from-to)659-662
Number of pages4
JournalMaterials Science Forum
Volume353-356
Publication statusPublished - Jan 1 2001

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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