Dissolution kinetics of Si into Ge (111) substrate on the nanoscale

Zoltán Balogh, Zoltán Erdélyi, Dezso L. Beke, Ulf Wiedwald, Holger Pfeiffer, Anna Tschetschetkin, Paul Ziemann

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this paper we present experiments and simulations on the dissolution of Si into single crystalline Ge(111) substrates. The interface shift during the dissolution was tracked by X-ray Photoelectron Spectroscopy. It was obtained that the interface remained sharp and shifted according to anomalous kinetics similarly to our previous measurement in the Si/amorphous-Ge system. The interface shift, x, can be described by a power function of time x ∞ t kc with a kinetic exponent, kc, of 0.85 ± 0.1, larger than the one measured for the amorphous system (0.7 ± 0.1). Both exponents, however, are different from the kc = 0.5 Fickian (parabolic) value and it is interpreted as a nanoscale diffusional anomaly caused by the strong composition dependence of the diffusion coefficients.

Original languageEnglish
Pages (from-to)952-955
Number of pages4
JournalThin Solid Films
Volume519
Issue number2
DOIs
Publication statusPublished - Nov 1 2010

Keywords

  • Anomalous diffusion
  • Photoelectron spectroscopy
  • Semiconductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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    Balogh, Z., Erdélyi, Z., Beke, D. L., Wiedwald, U., Pfeiffer, H., Tschetschetkin, A., & Ziemann, P. (2010). Dissolution kinetics of Si into Ge (111) substrate on the nanoscale. Thin Solid Films, 519(2), 952-955. https://doi.org/10.1016/j.tsf.2010.08.146