Single crystals of monoclinic tantalum trisulfide TaS//3 have been irradiated with fast electrons and neutrons. Resistivity versus temperature curves have been recorded, before and after irradiation from 30 to 300 K and electron diffraction patterns have been followed, in situ, during irradiation at 7 K in a high voltage electron microscope. Irradiation defects even in low concentrations of about 10** minus **3 have been shown to pin the charge density waves, to prevent their low temperature ordering and to smear out the phase transitions from the resistivity versus temperature curves. In spite of that, the insulating low temperature properties do not disappear. In fact, the monoclinic TaS//3 is shown to be the first low dimensional conductor in which the pinning of the charge density waves produces no change in the low temperature resistivity.
|Number of pages||4|
|Journal||Journal de physique. Lettres|
|Publication status||Published - 1981|
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