DISLOCATIONS OR POINT DEFECTS: A STUDY OF DEEP LEVELS IN MECHANICALLY STRESSED GaP p-n JUNCTIONS.

L. Dozsa, G. Ferenczi

Research output: Contribution to journalConference article

Abstract

Degradation is a very important effect for devices made from A**I**I**IB**V compounds; major parts are played by dislocations and stress inhomogeneities, but the mechanism is not entirely clear. The authors have examined the behavior of deep levels associated with degradation in order to elucidate it. Further research has shown that a family of such deep levels can arise without substantial degradation, but in that case the spectra obtained by deep-level transient spectroscopy DLTS are very much dependent on the illumination, minority injection, and heat treatment. These levels have been detected here in a light-emitting diode.

Original languageEnglish
Pages (from-to)130-133
Number of pages4
JournalBulletin of the Academy of Sciences of the U.S.S.R. Physical series
Volume51
Issue number9
Publication statusPublished - Dec 1 1986
EventProc of the Fifth Int Conf on the Struct and Prop of Dislocat in Semicond - Moscow, USSR
Duration: Mar 17 1986Mar 22 1986

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ASJC Scopus subject areas

  • Engineering(all)

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