DISLOCATIONS OR POINT DEFECTS

A STUDY OF DEEP LEVELS IN MECHANICALLY STRESSED GaP p-n JUNCTIONS.

L. Dózsa, G. Ferenczi

Research output: Contribution to journalArticle

Abstract

Degradation is a very important effect for devices made from A**I**I**IB**V compounds; major parts are played by dislocations and stress inhomogeneities, but the mechanism is not entirely clear. The authors have examined the behavior of deep levels associated with degradation in order to elucidate it. Further research has shown that a family of such deep levels can arise without substantial degradation, but in that case the spectra obtained by deep-level transient spectroscopy DLTS are very much dependent on the illumination, minority injection, and heat treatment. These levels have been detected here in a light-emitting diode.

Original languageEnglish
Pages (from-to)130-133
Number of pages4
JournalBulletin of the Academy of Sciences of the U.S.S.R. Physical series
Volume51
Issue number9
Publication statusPublished - 1986

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Point defects
Dislocations (crystals)
point defects
Deep level transient spectroscopy
Degradation
defects
degradation
Light emitting diodes
minorities
Lighting
Heat treatment
inhomogeneity
heat treatment
light emitting diodes
illumination
injection
spectroscopy

ASJC Scopus subject areas

  • Engineering(all)

Cite this

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title = "DISLOCATIONS OR POINT DEFECTS: A STUDY OF DEEP LEVELS IN MECHANICALLY STRESSED GaP p-n JUNCTIONS.",
abstract = "Degradation is a very important effect for devices made from A**I**I**IB**V compounds; major parts are played by dislocations and stress inhomogeneities, but the mechanism is not entirely clear. The authors have examined the behavior of deep levels associated with degradation in order to elucidate it. Further research has shown that a family of such deep levels can arise without substantial degradation, but in that case the spectra obtained by deep-level transient spectroscopy DLTS are very much dependent on the illumination, minority injection, and heat treatment. These levels have been detected here in a light-emitting diode.",
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AU - Ferenczi, G.

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