Dislocation structures in Si:C films: generating 'plateau-like' surface defects?

T. Marek, M. Werner, P. Lavéant, G. Gerth, P. Werner

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We investigate Si(001) surfaces and bulk structures of molecular beam epitaxial (MBE) grown Si/Si:C heterolayers and describe 'plateau-like' surface defects with a hill shape. The diameters of these surface defects are up to few 100 nanometers and their heights lie in the range of some nanometers. Plan-view and cross-sectional TEM bulk analysis of Si/Si:C heterolayers suggest a correlation between the 'plateau-like' defects on the surface and extended dislocation structures in the bulk. The nucleation of these defects seems to have a correlation with the carbon present in the Si:C alloy.

Original languageEnglish
Pages (from-to)769-773
Number of pages5
JournalCrystal Research and Technology
Volume35
Issue number6
DOIs
Publication statusPublished - Jan 1 2000

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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