We investigate Si(001) surfaces and bulk structures of molecular beam epitaxial (MBE) grown Si/Si:C heterolayers and describe 'plateau-like' surface defects with a hill shape. The diameters of these surface defects are up to few 100 nanometers and their heights lie in the range of some nanometers. Plan-view and cross-sectional TEM bulk analysis of Si/Si:C heterolayers suggest a correlation between the 'plateau-like' defects on the surface and extended dislocation structures in the bulk. The nucleation of these defects seems to have a correlation with the carbon present in the Si:C alloy.
|Number of pages||5|
|Journal||Crystal Research and Technology|
|Publication status||Published - Jan 1 2000|
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics