Dislocation formation and B transient diffusion in C coimplanted Si

A. Cacciato, J. G.E. Klappe, N. E.B. Cowern, W. Vandervost, L. P. Biró, J. S. Custer, F. W. Saris

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Suppression of dislocation formation and boron transient diffusion by carbon coimplantation is studied by means of transmission electron microscopy, secondary-ion-mass spectrometry, photoluminescence spectroscopy, and high-resolution x-ray diffraction. It is shown that both the effects are due to the formation of C-related damage which acts as a trap for Si interstitials. Quantitative simulations indicate that this damage is probably formed by coprecipitation of Si and C atoms in Si1.15C complexes. These complexes also deteriorate the electrical properties of the implanted layer They dissolve at annealing temperatures higher than 900°C. When this occurs, the effect of C is reduced and both B transient diffusion and dislocations, as well as the recovery of the electrical properties, are observed.

Original languageEnglish
Pages (from-to)2314-2325
Number of pages12
JournalJournal of Applied Physics
Issue number5
Publication statusPublished - Mar 1 1996

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Cacciato, A., Klappe, J. G. E., Cowern, N. E. B., Vandervost, W., Biró, L. P., Custer, J. S., & Saris, F. W. (1996). Dislocation formation and B transient diffusion in C coimplanted Si. Journal of Applied Physics, 79(5), 2314-2325. https://doi.org/10.1063/1.361157