Dislocation formation and B transient diffusion in C coimplanted Si

A. Cacciato, J. G E Klappe, N. E B Cowern, W. Vandervost, L. Bíró, J. S. Custer, F. W. Saris

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Suppression of dislocation formation and boron transient diffusion by carbon coimplantation is studied by means of transmission electron microscopy, secondary-ion-mass spectrometry, photoluminescence spectroscopy, and high-resolution x-ray diffraction. It is shown that both the effects are due to the formation of C-related damage which acts as a trap for Si interstitials. Quantitative simulations indicate that this damage is probably formed by coprecipitation of Si and C atoms in Si1.15C complexes. These complexes also deteriorate the electrical properties of the implanted layer They dissolve at annealing temperatures higher than 900°C. When this occurs, the effect of C is reduced and both B transient diffusion and dislocations, as well as the recovery of the electrical properties, are observed.

Original languageEnglish
Pages (from-to)2314-2325
Number of pages12
JournalJournal of Applied Physics
Volume79
Issue number5
Publication statusPublished - Mar 1 1996

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electrical properties
damage
secondary ion mass spectrometry
interstitials
boron
x ray diffraction
recovery
retarding
traps
photoluminescence
transmission electron microscopy
annealing
carbon
high resolution
spectroscopy
atoms
simulation

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Cacciato, A., Klappe, J. G. E., Cowern, N. E. B., Vandervost, W., Bíró, L., Custer, J. S., & Saris, F. W. (1996). Dislocation formation and B transient diffusion in C coimplanted Si. Journal of Applied Physics, 79(5), 2314-2325.

Dislocation formation and B transient diffusion in C coimplanted Si. / Cacciato, A.; Klappe, J. G E; Cowern, N. E B; Vandervost, W.; Bíró, L.; Custer, J. S.; Saris, F. W.

In: Journal of Applied Physics, Vol. 79, No. 5, 01.03.1996, p. 2314-2325.

Research output: Contribution to journalArticle

Cacciato, A, Klappe, JGE, Cowern, NEB, Vandervost, W, Bíró, L, Custer, JS & Saris, FW 1996, 'Dislocation formation and B transient diffusion in C coimplanted Si', Journal of Applied Physics, vol. 79, no. 5, pp. 2314-2325.
Cacciato A, Klappe JGE, Cowern NEB, Vandervost W, Bíró L, Custer JS et al. Dislocation formation and B transient diffusion in C coimplanted Si. Journal of Applied Physics. 1996 Mar 1;79(5):2314-2325.
Cacciato, A. ; Klappe, J. G E ; Cowern, N. E B ; Vandervost, W. ; Bíró, L. ; Custer, J. S. ; Saris, F. W. / Dislocation formation and B transient diffusion in C coimplanted Si. In: Journal of Applied Physics. 1996 ; Vol. 79, No. 5. pp. 2314-2325.
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