DIRECT TEM STUDY OF THE ROUGHENING OF SiO//2/Si INTERFACE INDUCED DURING AES DEPTH PROFILING.

P. Barna, L. Gosztola, A. Zalar, M. Rasigni

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The study of the microchemistry of interfaces in layer system by AES is based on ion sputtering. The roughening of the surface induced or enhanced by the sputtering process is now considered as one of the dominant effects determining the evaluated profile of interfaces. Very little direct data is available however on the real surface topography equivalent to the analyzed surface. SEM is suitable only to characterize the rough surfaces developing in polycrystalline materials of large grain sizes. The TEM replica technique has disadvantages in the preparation and also in the conservation of the original structure. A direct TEM investigation method has been worked out for determining the very fine surface roughness developed in amorphous or fine grained structures during the ion bombardment used for depth profiling.

Original languageEnglish
Title of host publicationSurface and Interface Analysis
Pages328
Number of pages1
Volume9
Edition1-6
Publication statusPublished - Jul 1986
EventSurf and Interface Anal, ECASIS 85, Proc of the Eur Conf on Appl of Surf and Interface Anal - Veldhoven, Neth
Duration: Oct 14 1986Oct 18 1986

Other

OtherSurf and Interface Anal, ECASIS 85, Proc of the Eur Conf on Appl of Surf and Interface Anal
CityVeldhoven, Neth
Period10/14/8610/18/86

Fingerprint

Depth profiling
Transmission electron microscopy
transmission electron microscopy
Sputtering
Polycrystalline materials
sputtering
Surface topography
Ion bombardment
Conservation
Surface roughness
replicas
Ions
conservation
bombardment
topography
surface roughness
ions
Scanning electron microscopy
grain size
fine structure

ASJC Scopus subject areas

  • Colloid and Surface Chemistry
  • Physical and Theoretical Chemistry

Cite this

Barna, P., Gosztola, L., Zalar, A., & Rasigni, M. (1986). DIRECT TEM STUDY OF THE ROUGHENING OF SiO//2/Si INTERFACE INDUCED DURING AES DEPTH PROFILING. In Surface and Interface Analysis (1-6 ed., Vol. 9, pp. 328)

DIRECT TEM STUDY OF THE ROUGHENING OF SiO//2/Si INTERFACE INDUCED DURING AES DEPTH PROFILING. / Barna, P.; Gosztola, L.; Zalar, A.; Rasigni, M.

Surface and Interface Analysis. Vol. 9 1-6. ed. 1986. p. 328.

Research output: Chapter in Book/Report/Conference proceedingChapter

Barna, P, Gosztola, L, Zalar, A & Rasigni, M 1986, DIRECT TEM STUDY OF THE ROUGHENING OF SiO//2/Si INTERFACE INDUCED DURING AES DEPTH PROFILING. in Surface and Interface Analysis. 1-6 edn, vol. 9, pp. 328, Surf and Interface Anal, ECASIS 85, Proc of the Eur Conf on Appl of Surf and Interface Anal, Veldhoven, Neth, 10/14/86.
Barna P, Gosztola L, Zalar A, Rasigni M. DIRECT TEM STUDY OF THE ROUGHENING OF SiO//2/Si INTERFACE INDUCED DURING AES DEPTH PROFILING. In Surface and Interface Analysis. 1-6 ed. Vol. 9. 1986. p. 328
Barna, P. ; Gosztola, L. ; Zalar, A. ; Rasigni, M. / DIRECT TEM STUDY OF THE ROUGHENING OF SiO//2/Si INTERFACE INDUCED DURING AES DEPTH PROFILING. Surface and Interface Analysis. Vol. 9 1-6. ed. 1986. pp. 328
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