Direct surface relief formation in As0.2Se0.8 layers

M. Trunov, P. Lytvyn, V. Takats, I. Charnovich, S. Kokenyesi

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The process of light-stimulated periodic surface relief formation in As0.2Se0.8 layers was investigated by in situ AFM depth profiling and compared with data on diffraction efficiency η of similar holographic gratings, measured in a reflection mode. It was discovered, that the time (exposure) dependence of the surface deformation Δd has at least two components, which correspond to the stable sinusoidal relief formation up to the giant, Δd/d >10% changes in this best composition from As-Se system. It is assumed that the surface relief formation is connected with induced volume expansion (up to 1%) as well as with a lateral mass transport. A small dynamical component of η appears when the light is switched on. Most probably it depends on the charge carrier generation and corresponding changes of the refraction index.

Original languageEnglish
Pages (from-to)1959-1962
Number of pages4
JournalJournal of Optoelectronics and Advanced Materials
Volume11
Issue number12
Publication statusPublished - Dec 1 2009

Keywords

  • AFM
  • As- Se
  • Surface relief
  • Volume Expansion

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Direct surface relief formation in As<sub>0.2</sub>Se<sub>0.8</sub> layers'. Together they form a unique fingerprint.

  • Cite this