Investigations of direct one-step optical recording of surface optical and geometrical patterns in homogeneous and nanostructured chalcogenide layers were extended towards e-beam recording. Our aim was to establish the common features of the two processes, and to develop some optimum materials for prototypic micro- and nanosized elements for optoelectronics. Experiments were conducted on Se/As2S3 and Sb/As2S3 nanolayered structures (NLS) as well as on uniform Se, Sb and As2S3 layers. Both green laser light (λ = 535 nm) and e-beam (5-20 pA, 10-30 keV) induced bleaching in all NLS. The optical change was more efficient in Sb-containing NLS. In contrast, volume expansion occurred only in chalcogenide-chalcogenide NLS and the homogeneous Se or As2S3 layers. Its magnitude was larger for the NLS (Δd /d ≥10%); no volume change was detected in Sb layer. A comparison of the two types of recording revealed the role of interdiffusion and induced free volume aggregation in a giant relief formation under the increased fluidity conditions. It was shown that these effects could be used to fabricate micro lenses, amplitude-phase optical modulating and guiding elements.
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Issue number||SUPPL. 1|
|Publication status||Published - Dec 1 2009|
ASJC Scopus subject areas
- Condensed Matter Physics