Direct evidence of fluorine-related defects in F+, BF+ and BF2+ implanted silicon by positron annihilation

L. Liszkay, E. Kótai, Zs Kajcsos, T. Laine

Research output: Contribution to journalArticle

Abstract

Vacancy-type defects were studied in p type silicon single crystal implanted with F+, BF+ and BF2+ ions at room temperature. A fluence of 1.5-3×1013 ions cm-3 was used at 7 keV/AMU projectile energy. Samples implanted at room temperature showed a profile of open-volume defects extending up to nearly 1 μm, well beyond the penetration depth of the implanted ions. After annealing at 600 °C, a defect zone with a characteristic S parameter that is below the silicon lattice value was created in a depth range that corresponds to the stopping profile of the fluorine ions. The relative change of the Doppler parameters is opposite to that induced by vacancies in silicon. We attribute the created defect population to a fluorine-decorated vacancies created during the annealing of implantation induced defects.

Original languageEnglish
Pages (from-to)683-685
Number of pages3
JournalMaterials Science Forum
Volume255-257
Publication statusPublished - Dec 1 1997

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Keywords

  • Defect
  • Fluorine
  • Ion-Implantation
  • Positron Beam
  • Semiconductors
  • Si
  • Silicon
  • Vacancy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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