Diffusion and deformations in heterosystems with GaN/AlN superlattices, according to data from EXAFS spectroscopy

S. B. Erenburg, S. V. Trubina, K. S. Zhuravlev, T. V. Malin, B. Pecz

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Multilayered samples with extremely narrow GaN quantum wells in an AlN host are synthesized via ammonia MBE. The parameters of the microstructure are determined by means of EXAFS spectroscopy, high-resolution electron microscopy, and low-angle scattering. Their relationship to the morphology of GaN/AlN superlattices is established. The influence of growth conditions and the thickness of superlattices on their optical properties and mixing in the near-boundary layers is established.

Original languageEnglish
Pages (from-to)1147-1150
Number of pages4
JournalBulletin of the Russian Academy of Sciences: Physics
Volume77
Issue number9
DOIs
Publication statusPublished - Sep 1 2013

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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