Multilayered samples with extremely narrow GaN quantum wells in an AlN host are synthesized via ammonia MBE. The parameters of the microstructure are determined by means of EXAFS spectroscopy, high-resolution electron microscopy, and low-angle scattering. Their relationship to the morphology of GaN/AlN superlattices is established. The influence of growth conditions and the thickness of superlattices on their optical properties and mixing in the near-boundary layers is established.
|Number of pages||4|
|Journal||Bulletin of the Russian Academy of Sciences: Physics|
|Publication status||Published - Sep 1 2013|
ASJC Scopus subject areas
- Physics and Astronomy(all)