Diffused p-n GaAs junctions with nano/microrelief active interface

O. Yu Borkovskaya, N. L. Dmitruk, Zs J. Horváth, I. B. Mamontova, A. V. Sukach

Research output: Contribution to journalConference article

2 Citations (Scopus)


The technology of a submicron p+-GaAs layer formation on nano/microtextured n-GaAs substrate by a low-temperature (550 °C) diffusion of Zn is elaborated aimed at ensuring both improved optical and good electronic properties of a textured p-n junction for the photodiode and solar cells (SC) application. The optical, photoelectric and electrical characteristics of the obtained photodiode structures were studied as a function of the surface microrelief morphology of dendritic or quasigrating type, preliminary processing and the process diffusion duration. Different diffusion conditions were shown to be optimal to obtain maximal improving SC efficiency for structure with different microrelief morphology.

Original languageEnglish
Pages (from-to)1523-1526
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number4
Publication statusPublished - Dec 1 2007
Event8th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC'06 - Cadiz, Spain
Duration: May 14 2006May 17 2006


ASJC Scopus subject areas

  • Condensed Matter Physics

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