The technology of a submicron p+-GaAs layer formation on nano/microtextured n-GaAs substrate by a low-temperature (550 °C) diffusion of Zn is elaborated aimed at ensuring both improved optical and good electronic properties of a textured p-n junction for the photodiode and solar cells (SC) application. The optical, photoelectric and electrical characteristics of the obtained photodiode structures were studied as a function of the surface microrelief morphology of dendritic or quasigrating type, preliminary processing and the process diffusion duration. Different diffusion conditions were shown to be optimal to obtain maximal improving SC efficiency for structure with different microrelief morphology.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - Dec 1 2007|
|Event||8th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC'06 - Cadiz, Spain|
Duration: May 14 2006 → May 17 2006
ASJC Scopus subject areas
- Condensed Matter Physics