Difference of soft error rates in SOI SRAM induced by various high energy ion species

Satoshi Abo, Naoyuki Masuda, Fujio Wakaya, T. Lohner, Shinobu Onoda, Takahiro Makino, Toshio Hirao, Takeshi Ohshima, Toshiaki Iwamatsu, Hidekazu Oda, Mikio Takai

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Soft error rates in silicon-on-insulator (SOI) static random access memories (SRAMs) with a technology node of 90 nm have been investigated by beryllium and carbon ion probes. The soft error rates induced by beryllium and carbon probes started to increase with probe energies of 5.0 and 8.5 MeV, in which probes slightly penetrated the over-layer, and were saturated with energies at and above 7.0 and 9.0 MeV, in which the generated charge in the SOI body was more than the critical charge. The soft error rates in the SOI SRAMs by various ion probes were also compared with the generated charge in the SOI body. The soft error rates induced by hydrogen and helium ion probes were 1-2 orders of magnitude lower than those by beryllium, carbon and oxygen ion probes. The soft error rates depend not only on the generated charge in the SOI body but also on the incident ion species.

Original languageEnglish
Pages (from-to)262-265
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume273
DOIs
Publication statusPublished - Feb 15 2012

Fingerprint

random access memory
ion probes
insulators
Data storage equipment
Silicon
beryllium
Ions
silicon
Beryllium
ions
probes
carbon
energy
Carbon
helium ions
hydrogen ions
oxygen ions
Helium
Hydrogen
Oxygen

Keywords

  • Body-tie structure
  • Floating body effect
  • Nuclear microprobe
  • Reliability
  • Silicon-on-insulator
  • Soft error

ASJC Scopus subject areas

  • Instrumentation
  • Nuclear and High Energy Physics

Cite this

Difference of soft error rates in SOI SRAM induced by various high energy ion species. / Abo, Satoshi; Masuda, Naoyuki; Wakaya, Fujio; Lohner, T.; Onoda, Shinobu; Makino, Takahiro; Hirao, Toshio; Ohshima, Takeshi; Iwamatsu, Toshiaki; Oda, Hidekazu; Takai, Mikio.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 273, 15.02.2012, p. 262-265.

Research output: Contribution to journalArticle

Abo, Satoshi ; Masuda, Naoyuki ; Wakaya, Fujio ; Lohner, T. ; Onoda, Shinobu ; Makino, Takahiro ; Hirao, Toshio ; Ohshima, Takeshi ; Iwamatsu, Toshiaki ; Oda, Hidekazu ; Takai, Mikio. / Difference of soft error rates in SOI SRAM induced by various high energy ion species. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2012 ; Vol. 273. pp. 262-265.
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AB - Soft error rates in silicon-on-insulator (SOI) static random access memories (SRAMs) with a technology node of 90 nm have been investigated by beryllium and carbon ion probes. The soft error rates induced by beryllium and carbon probes started to increase with probe energies of 5.0 and 8.5 MeV, in which probes slightly penetrated the over-layer, and were saturated with energies at and above 7.0 and 9.0 MeV, in which the generated charge in the SOI body was more than the critical charge. The soft error rates in the SOI SRAMs by various ion probes were also compared with the generated charge in the SOI body. The soft error rates induced by hydrogen and helium ion probes were 1-2 orders of magnitude lower than those by beryllium, carbon and oxygen ion probes. The soft error rates depend not only on the generated charge in the SOI body but also on the incident ion species.

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