Dielectric function of disorder in high-fluence helium-implanted silicon

P. Petrik, M. Fried, T. Lohner, N. Q. Khánh, P. Basa, O. Polgár, C. Major, J. Gyulai, F. Cayrel, D. Alquier

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Dielectric function of disorder in single-crystalline silicon (c-Si) implanted by He with energy of 40 keV and fluences from 1 × 1016 to 1 × 1017 cm-2 were determined around the E1 and E2 critical points (CPs) by spectroscopic ellipsometry. The implanted material was modeled by an effective medium composition of c-Si and damaged Si. The dielectric function of damaged Si was calculated using the model dielectric function of Adachi to fit the E1 and E2 CP parameters of the MDF. The penetration depth of light in the photon energy range of 3-5 eV is less than 100 nm, which allows a simple layer structure of (surface oxide)/(surface amorphous layer)/(c-Si + damaged Si as a substrate). The oscillator energies and strengths decrease, while the broadening parameters increase with increasing fluence. Rutherford backscattering spectrometry was used for cross-checking of the surface disorder.

Original languageEnglish
Pages (from-to)192-195
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume253
Issue number1-2
DOIs
Publication statusPublished - Dec 2006

Fingerprint

Helium
Silicon
fluence
helium
disorders
Crystalline materials
critical point
silicon
Spectroscopic ellipsometry
Rutherford backscattering spectroscopy
Oxides
Spectrometry
ellipsometry
energy
backscattering
penetration
Photons
oscillators
oxides
photons

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Dielectric function of disorder in high-fluence helium-implanted silicon. / Petrik, P.; Fried, M.; Lohner, T.; Khánh, N. Q.; Basa, P.; Polgár, O.; Major, C.; Gyulai, J.; Cayrel, F.; Alquier, D.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 253, No. 1-2, 12.2006, p. 192-195.

Research output: Contribution to journalArticle

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AU - Polgár, O.

AU - Major, C.

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