Dielectric function and defect structure of CdTe implanted by 350-keV Bi ions

P. Petrik, M. Fried, Z. Zolnai, Nguyen Q. Khánh, Jian Li, Robert W. Collins, T. Lohner

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this work we have developed optical models for the ellipsometric characterization of Bi-implanted CdTe. We have characterized the amount and nature of disorder using Rutherford Backscattering Spectrometry combined with channeling (RBS/C). Samples with a systematically varying degree of disorder were prepared using ion implantation of Bi into single-crystalline CdTe at an energy of 350 keV with increasing doses from 3.75×1013 cm -2 to 6×1014 cm-2. The motivation for use of the high atomic mass Bi ions was that previous studies using lighter ions revealed damage at a low level, even for doses several times higher than the amorphization threshold estimated by simulation [P. Petrik et al., phys. stat. sol. (c) 5, 1358 (2008)]. In contrast, Bi ions create sufficient disorder for investigation of the changes in dielectric function critical point (CP) features in a wider variety of structures from single-crystalline to the disordered state. The CP features can be described by numerous methods starting from the standard CP model, through the parameterization of Adachi [Adachi et al., J. Appl. Phys. 74, 3435 (1993)], and finally to the generalized CP models. The standard CP model has been demonstrated to be a reliable approach for polycrystalline CdTe characterization used in photovoltaic applications [Li et al., phys. stat. sol. (a) 205, 901 (2008)].

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages81-87
Number of pages7
Volume1123
Publication statusPublished - 2009
Event2008 MRS Fall Meeting - Boston, MA, United States
Duration: Dec 2 2008Dec 4 2008

Other

Other2008 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period12/2/0812/4/08

Fingerprint

Defect structures
critical point
Ions
defects
Polymethyl Methacrylate
Sols
disorders
ions
Crystalline materials
Amorphization
Rutherford backscattering spectroscopy
Parameterization
dosage
Ion implantation
atomic weights
Spectrometry
parameterization
ion implantation
backscattering
damage

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Petrik, P., Fried, M., Zolnai, Z., Khánh, N. Q., Li, J., Collins, R. W., & Lohner, T. (2009). Dielectric function and defect structure of CdTe implanted by 350-keV Bi ions. In Materials Research Society Symposium Proceedings (Vol. 1123, pp. 81-87)

Dielectric function and defect structure of CdTe implanted by 350-keV Bi ions. / Petrik, P.; Fried, M.; Zolnai, Z.; Khánh, Nguyen Q.; Li, Jian; Collins, Robert W.; Lohner, T.

Materials Research Society Symposium Proceedings. Vol. 1123 2009. p. 81-87.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Petrik, P, Fried, M, Zolnai, Z, Khánh, NQ, Li, J, Collins, RW & Lohner, T 2009, Dielectric function and defect structure of CdTe implanted by 350-keV Bi ions. in Materials Research Society Symposium Proceedings. vol. 1123, pp. 81-87, 2008 MRS Fall Meeting, Boston, MA, United States, 12/2/08.
Petrik P, Fried M, Zolnai Z, Khánh NQ, Li J, Collins RW et al. Dielectric function and defect structure of CdTe implanted by 350-keV Bi ions. In Materials Research Society Symposium Proceedings. Vol. 1123. 2009. p. 81-87
Petrik, P. ; Fried, M. ; Zolnai, Z. ; Khánh, Nguyen Q. ; Li, Jian ; Collins, Robert W. ; Lohner, T. / Dielectric function and defect structure of CdTe implanted by 350-keV Bi ions. Materials Research Society Symposium Proceedings. Vol. 1123 2009. pp. 81-87
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