Dicarbon antisite defect in n -type 4H-SiC

T. Umeda, J. Isoya, N. Morishita, T. Ohshima, E. Janzén, A. Gali

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We identify the negatively charged dicarbon antisite defect (C2 core at silicon site) in electron-irradiated n -type 4H-SiC by means of combined electron paramagnetic resonance (EPR) measurements and first-principles calculations. The HEI5 and HEI6 EPR centers (S=1/2; C1h symmetry) are associated with cubic and hexagonal dicarbon antisite defects, respectively. This assignment is based on a comparison of the measured and calculated hyperfine tensors of C 13 and S 29 i atoms as far as the second neighborhood around the defects. Theoretically, the dicarbon antisites are stable in a single negative charge state under a wide range of n -type samples. We found that the defects can be created under a wide range of irradiation conditions, and our measurements strongly suggest the existence of carbon antisite defects in the as-grown samples. Annealing studies revealed several atomistic processes such as recombination of carbon interstitials with vacancies and formation of carbon aggregates. These processes were activated at about 1000°C, and as theoretically predicted, the dicarbon antisite is much more stable than the dicarbon interstitial defect (C2 core at carbon site). The measured activation temperature is consistent with the temperature range for forming various carbon aggregate-related photoluminescence centers.

Original languageEnglish
Article number115211
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume79
Issue number11
DOIs
Publication statusPublished - Mar 3 2009

Fingerprint

antisite defects
Carbon
Defects
carbon
defects
electron paramagnetic resonance
interstitials
Paramagnetic resonance
Silicon
Vacancies
Tensors
activation
tensors
Photoluminescence
photoluminescence
Chemical activation
irradiation
annealing
Irradiation
temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Dicarbon antisite defect in n -type 4H-SiC. / Umeda, T.; Isoya, J.; Morishita, N.; Ohshima, T.; Janzén, E.; Gali, A.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 79, No. 11, 115211, 03.03.2009.

Research output: Contribution to journalArticle

Umeda, T. ; Isoya, J. ; Morishita, N. ; Ohshima, T. ; Janzén, E. ; Gali, A. / Dicarbon antisite defect in n -type 4H-SiC. In: Physical Review B - Condensed Matter and Materials Physics. 2009 ; Vol. 79, No. 11.
@article{23dbd384b1e24e50bf661381dd1a57a1,
title = "Dicarbon antisite defect in n -type 4H-SiC",
abstract = "We identify the negatively charged dicarbon antisite defect (C2 core at silicon site) in electron-irradiated n -type 4H-SiC by means of combined electron paramagnetic resonance (EPR) measurements and first-principles calculations. The HEI5 and HEI6 EPR centers (S=1/2; C1h symmetry) are associated with cubic and hexagonal dicarbon antisite defects, respectively. This assignment is based on a comparison of the measured and calculated hyperfine tensors of C 13 and S 29 i atoms as far as the second neighborhood around the defects. Theoretically, the dicarbon antisites are stable in a single negative charge state under a wide range of n -type samples. We found that the defects can be created under a wide range of irradiation conditions, and our measurements strongly suggest the existence of carbon antisite defects in the as-grown samples. Annealing studies revealed several atomistic processes such as recombination of carbon interstitials with vacancies and formation of carbon aggregates. These processes were activated at about 1000°C, and as theoretically predicted, the dicarbon antisite is much more stable than the dicarbon interstitial defect (C2 core at carbon site). The measured activation temperature is consistent with the temperature range for forming various carbon aggregate-related photoluminescence centers.",
author = "T. Umeda and J. Isoya and N. Morishita and T. Ohshima and E. Janz{\'e}n and A. Gali",
year = "2009",
month = "3",
day = "3",
doi = "10.1103/PhysRevB.79.115211",
language = "English",
volume = "79",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Physical Society",
number = "11",

}

TY - JOUR

T1 - Dicarbon antisite defect in n -type 4H-SiC

AU - Umeda, T.

AU - Isoya, J.

AU - Morishita, N.

AU - Ohshima, T.

AU - Janzén, E.

AU - Gali, A.

PY - 2009/3/3

Y1 - 2009/3/3

N2 - We identify the negatively charged dicarbon antisite defect (C2 core at silicon site) in electron-irradiated n -type 4H-SiC by means of combined electron paramagnetic resonance (EPR) measurements and first-principles calculations. The HEI5 and HEI6 EPR centers (S=1/2; C1h symmetry) are associated with cubic and hexagonal dicarbon antisite defects, respectively. This assignment is based on a comparison of the measured and calculated hyperfine tensors of C 13 and S 29 i atoms as far as the second neighborhood around the defects. Theoretically, the dicarbon antisites are stable in a single negative charge state under a wide range of n -type samples. We found that the defects can be created under a wide range of irradiation conditions, and our measurements strongly suggest the existence of carbon antisite defects in the as-grown samples. Annealing studies revealed several atomistic processes such as recombination of carbon interstitials with vacancies and formation of carbon aggregates. These processes were activated at about 1000°C, and as theoretically predicted, the dicarbon antisite is much more stable than the dicarbon interstitial defect (C2 core at carbon site). The measured activation temperature is consistent with the temperature range for forming various carbon aggregate-related photoluminescence centers.

AB - We identify the negatively charged dicarbon antisite defect (C2 core at silicon site) in electron-irradiated n -type 4H-SiC by means of combined electron paramagnetic resonance (EPR) measurements and first-principles calculations. The HEI5 and HEI6 EPR centers (S=1/2; C1h symmetry) are associated with cubic and hexagonal dicarbon antisite defects, respectively. This assignment is based on a comparison of the measured and calculated hyperfine tensors of C 13 and S 29 i atoms as far as the second neighborhood around the defects. Theoretically, the dicarbon antisites are stable in a single negative charge state under a wide range of n -type samples. We found that the defects can be created under a wide range of irradiation conditions, and our measurements strongly suggest the existence of carbon antisite defects in the as-grown samples. Annealing studies revealed several atomistic processes such as recombination of carbon interstitials with vacancies and formation of carbon aggregates. These processes were activated at about 1000°C, and as theoretically predicted, the dicarbon antisite is much more stable than the dicarbon interstitial defect (C2 core at carbon site). The measured activation temperature is consistent with the temperature range for forming various carbon aggregate-related photoluminescence centers.

UR - http://www.scopus.com/inward/record.url?scp=65249121352&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65249121352&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.79.115211

DO - 10.1103/PhysRevB.79.115211

M3 - Article

AN - SCOPUS:65249121352

VL - 79

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 11

M1 - 115211

ER -