Diamond overgrown InAlN/GaN HEMT

M. Alomari, M. Dipalo, S. Rossi, M. A. Diforte-Poisson, S. Delage, J. F. Carlin, N. Grandjean, C. Gaquiere, L. Toth, B. Pecz, E. Kohn

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41 Citations (Scopus)


In this work the technology and characterization of nanocrystalline diamond (NCD) films directly grown on InAlN/GaN HEMTs is presented. Optimization of GaN based HEMT process steps including metallization stacks is discussed. A fully processed InAlN/GaN HEMT structure with 7 nm barrier has been overgrown in a temperature range of 750 °C to 800 °C with a 500 nm thick nanocrystalline diamond film in a Hot Filament CVD system. First results of semi-enhancement mode of DC and RF HEMT operation are reported. The grown NCD films were characterized by SEM, TEM, and Raman spectroscopy. Although no direct thermal conductivity measurements are conducted yet; the performed experiments shows the compatibility of growing high quality NCD films, several microns thick, on InAlN/GaN HEMTs as a potential material for heat extraction purposes.

Original languageEnglish
Pages (from-to)604-608
Number of pages5
JournalDiamond and Related Materials
Issue number4
Publication statusPublished - Apr 1 2011


  • GaN HEMT
  • High temperature growth
  • InAlN/GaN
  • Nanocrystalline diamond

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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  • Cite this

    Alomari, M., Dipalo, M., Rossi, S., Diforte-Poisson, M. A., Delage, S., Carlin, J. F., Grandjean, N., Gaquiere, C., Toth, L., Pecz, B., & Kohn, E. (2011). Diamond overgrown InAlN/GaN HEMT. Diamond and Related Materials, 20(4), 604-608. https://doi.org/10.1016/j.diamond.2011.01.006