Diamond formation in cubic silicon carbide

B. Pécz, H. Weishart, V. Heera, L. Tóth

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A study was conducted on the diamond formation in cubic silicon carbide. The transmission electron microscopy was used to investigate the formation of graphite or diamond precipitates depending on implantation parameters. The results showed the growth of diamond grains as large as 10 nm after implantation at 1200 °C.

Original languageEnglish
Pages (from-to)46-48
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number1
DOIs
Publication statusPublished - Jan 6 2003

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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