Diamond formation by carbon implantation into cubic silicon carbide

H. Weishart, V. Heera, F. Eichhorn, B. Pécz, L. Toth, W. Skorupa

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Cubic SiC is implanted with carbon ions at 600, 900, 1100 and 1200 °C. X-ray diffraction and transmission electron microscopy revealed the influence of implantation temperature and dose rate on the formation of graphite and diamond precipitates, respectively. The high dose carbon implantation at 600 °C yields graphite already in a textured form. Spherical diamond grains, which are always epitaxial to the SiC, are found in samples implanted at 900 °C or higher. Increasing the dose rate leads to formation of graphite instead of diamond at 900 °C as well. Hence, a critical temperature for diamond evolution exists, which depends on dose rate. Size and shape of the formed diamond precipitates is not influenced by dose rate within the investigated range. Increasing the fluence results in bigger diamond nanocrystals, which are bordered by facets.

Original languageEnglish
Pages (from-to)627-632
Number of pages6
JournalDiamond and Related Materials
Issue number4-8
Publication statusPublished - Apr 1 2004



  • Diamond crystal
  • Ion bombardment
  • Microstructure
  • Silicon carbide (SiC)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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