Cu-Ag films were deposited in vacuum of 10-5-10-6 mbar onto freshly cleaned Si wafers. The composition of the films corresponded to Cu, Cu9Ag1, Cu4Ag6 and Ag. The films were investigated by X-ray diffraction and pole figures of <111> and <100> directions were recorded. TEM and XTEM were used to determine the morphological properties of the films. We found that Ag modifies the interaction of Cu with the Si substrate. Low amounts of Ag are enhancing the formation of the biaxial <100> texture of Cu. Larger amounts of Ag result in the formation of <111> wire texture of both Ag and Cu components.
ASJC Scopus subject areas
- Physics and Astronomy(all)