Development of enhanced depth-resolution technique for shallow dopant profiles

M. Fujita, J. Tajima, T. Nakagawa, S. Abo, A. Kinomura, F. Pászti, M. Takai, R. Schork, L. Frey, H. Ryssel

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A rapid shrinkage in the minimum feature size of integrated circuits requires analysis of dopants in their shallow source-drain and their extensions with an enhanced depth resolution. Rutherford backscattering spectroscopy (RBS) combining a medium-energy He ion beam with a detector of improved energy resolution should meet the requirement of a depth resolution better than 5 nm at a depth of 10-20 nm in the next 10 years. A toroidal electrostatic analyzer of 4 × 10-3 energy resolution has been used to detect the scattered ions of a medium-energy He ion beam. Five keV As+ implanted Si or SiO2 samples were measured. Depth profiling results using the above technique are compared with those of glancing-angle RBS by MeV energy He ions. Limitations in the energy resolution due to various energy-spread contributions have been clarified.

Original languageEnglish
Pages (from-to)26-33
Number of pages8
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume190
Issue number1-4
DOIs
Publication statusPublished - May 1 2002

Keywords

  • Depth resolution
  • MEIS
  • RBS
  • SIMS
  • Si
  • TEA

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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