Development in Auger depth profiling technique

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Abstract

The usage of Auger depth profiling technique in its conventional form was limited considerably by surface roughening accompanying the ion sputtering. The depth resolution thus decreased with the thickness of the removed layer. Introducing rotation of the specimen and using glancing-incidence-angle ions the surface roughening was greatly reduced. Applying these conditions, one can study the ion mixing effect, which is another limiting factor for the depth resolution. A Mo 3.6 - Si 3.3 nm multilayer system deposited on a Si substrate has been studied by AES depth profiling with specimen rotation and glancing-incidence-angle ions (87° to the surface normal) in the 1-2 keV electron and 1-5 keV ion energy ranges, using a special ion gun. Depth profiling was followed by plasmon loss and elastic peak electron spectroscopy (EPES). EPES enables variation of the sampling depth, while the AES sampling depth was ≈0.4 nm. Plasmon loss spectra have been recorded on the Mo and Si layers and are considerably different from those obtained on pure Mo and Si, respectively. Simulation of the elastic peak intensity versus profiling depth resulted in good agreement with experimental data. The calculation was based on a single elastic scattering approach and with Liau's ion mixing model.

Original languageEnglish
Pages (from-to)653-657
Number of pages5
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume68
Issue numberC
DOIs
Publication statusPublished - May 6 1994

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

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