Determination of the thickness and density of the ion bombardment induced altered layer in SiC by means of reflection electron energy loss study

L. Kotis, A. Sulyok, M. Menyhárd, J. B. Malherbe, R. Q. Odendaal

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The steady state surfaces of ion bombarded 3C-, 4H- and 6H-SiC samples were studied by means of reflected electron energy loss spectroscopy (REELS). The REELS exhibit a well-defined loss peak in the region of about 20 eV. The position of the maximum of the loss peak depends on the bombarding ion energy (decreasing with increasing ion energy), and on the primary electron beam energy (increasing with increasing primary energy). This behavior can be explained if we suppose that the plasmon energy in the altered layer (produced by ion bombardment) is different from that of the unaltered bulk. In this case the measured loss peak is the sum of two overlapping plasmon peaks. With modeling the system as a homogeneous altered layer and a homogeneous unaltered substrate the plasmon energy in the altered layer was derived to be 19.8 eV. The large change of the plasmon energy with respect to the bulk value of 23 eV is explained by a thin low density overlayer on the surface of the sample produced by the ion bombardment.

Original languageEnglish
Pages (from-to)1785-1792
Number of pages8
JournalApplied Surface Science
Volume252
Issue number5
DOIs
Publication statusPublished - Dec 15 2005

Fingerprint

Electron reflection
Ion bombardment
bombardment
Energy dissipation
energy dissipation
Electron energy loss spectroscopy
electron energy
Ions
ions
Surface states
energy
Electron beams
Substrates
spectroscopy
electron beams

Keywords

  • Density of surface layer
  • Ion sputtering induced surface alteration
  • Plasmon energy of SiC
  • SiC

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Determination of the thickness and density of the ion bombardment induced altered layer in SiC by means of reflection electron energy loss study. / Kotis, L.; Sulyok, A.; Menyhárd, M.; Malherbe, J. B.; Odendaal, R. Q.

In: Applied Surface Science, Vol. 252, No. 5, 15.12.2005, p. 1785-1792.

Research output: Contribution to journalArticle

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AU - Malherbe, J. B.

AU - Odendaal, R. Q.

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AB - The steady state surfaces of ion bombarded 3C-, 4H- and 6H-SiC samples were studied by means of reflected electron energy loss spectroscopy (REELS). The REELS exhibit a well-defined loss peak in the region of about 20 eV. The position of the maximum of the loss peak depends on the bombarding ion energy (decreasing with increasing ion energy), and on the primary electron beam energy (increasing with increasing primary energy). This behavior can be explained if we suppose that the plasmon energy in the altered layer (produced by ion bombardment) is different from that of the unaltered bulk. In this case the measured loss peak is the sum of two overlapping plasmon peaks. With modeling the system as a homogeneous altered layer and a homogeneous unaltered substrate the plasmon energy in the altered layer was derived to be 19.8 eV. The large change of the plasmon energy with respect to the bulk value of 23 eV is explained by a thin low density overlayer on the surface of the sample produced by the ion bombardment.

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