Determination of the relative sputtering yield of carbon to tantalum by means of auger electron spectroscopy depth profiling

L. Kotis, M. Menyhard, A. Sulyok, G. Sáfrán, A. Zalar, J. Kovač, P. Panjan

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The relative sputtering yield of carbon with respect to tantalum was determined for 1 keV Ar+ ion bombardment in the angular range of 70° -82° (measured from surface normal) by means of Auger electron spectroscopy depth profiling of C/Ta and Ta/C bilayers. The ion bombardment-induced interface broadening was strongly different for the C/Ta and Ta/C, whereas the C/Ta interface was found to be rather sharp, the Ta/C interface was unusually broad. Still the relative sputtering yields (Yc/YTa) derived from the Auger electron spectroscopy depth profiles of the two specimens agreed well. The relative sputtering yields obtained were different from those determined earlier on thick layers, calculated by simulation of SRIM2006 and by the fitting equation of Eckstein. The difference increases with increase of angle of incidence.

Original languageEnglish
Pages (from-to)799-803
Number of pages5
JournalSurface and Interface Analysis
Volume41
Issue number10
DOIs
Publication statusPublished - Oct 15 2009

Keywords

  • AES depth profiling
  • Roughening
  • Sputtering yield

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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