Determination of the ion sputtering-induced in-depth distribution by means of elastic peak electron spectroscopy

A. Konkol, M. Menyhárd

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Elastic peak depth profiling was carried out on an Mo/Si multilayer system using a rotating specimen, grazing angle of incidence (86° with respect to the surface normal) and 0.5 keV Ar ion energy. The depth profiling was simulated by dynamic TRIM (T-DYN) code. The T-DYN code provided the in-depth distribution of the elements in any moment of the depth profiling process. Direct Monte Carlo calculation was developed to calculate the intensity of the elastic peak emitted from the distribution determined by the T-DYN code. Good agreement was found between the calculated and measured elastic peak depth profiles, proving that the Monte Carlo routine developed is readily applicable to inhomogeneous layers and the mixing of the Mo/Si layer is well described by the T-DYN code.

Original languageEnglish
Pages (from-to)699-706
Number of pages8
JournalSurface and Interface Analysis
Volume25
Issue number9
Publication statusPublished - Aug 1997

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Electron spectroscopy
Depth profiling
Sputtering
electron spectroscopy
sputtering
Ions
ions
Multilayers
grazing
incidence
moments
profiles

Keywords

  • Depth profiling
  • Elastic peak electron spectroscopy
  • Ion mixing

ASJC Scopus subject areas

  • Colloid and Surface Chemistry
  • Physical and Theoretical Chemistry

Cite this

Determination of the ion sputtering-induced in-depth distribution by means of elastic peak electron spectroscopy. / Konkol, A.; Menyhárd, M.

In: Surface and Interface Analysis, Vol. 25, No. 9, 08.1997, p. 699-706.

Research output: Contribution to journalArticle

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