Determination of the inelastic mean free path of electrons in GaAs and InP after surface cleaning by ion bombardment using elastic peak electron spectroscopy

L. Zommer, B. Lesiak, A. Jablonski, G. Gergely, M. Menyhárd, A. Sulyok, S. Gurban

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Abstract

The inelastic mean free path (IMFP) of electrons is an important material parameter needed for quantitative AES, EELS and non-destructive depth profiling. The distinction between the terms for IMFP and the attenuation length (AL) has been established by ASTM standards. A practical experimental method for determining values of the IMFP is elastic peak electron spectroscopy (EPES). In this method, experimentally determined ratios of elastically backscattered electrons from test surfaces and from a Ni reference standard are compared with the values evaluated theoretically. The present paper reports systematic measurements of the IMFP by EPES for GaAs and InP. They are carried out in two laboratories using two different electron spectrometers: a CMA in Budapest and DCMA in Warsaw. Prior to measurements, the samples were amorphized by high-energy Ar+ ions (100-400 keV), and the surface composition was determined by quantitative XPS. Argon cleaning produces enrichment of samples in the surface layer in Ga (80%) and In (70%), respectively. The experiments refer to a such modified sample surface that was considered in Monte Carlo calculations. The experimental data were analyzed using calibration curves from Monte Carlo calculations which account for multiple elastic scattering events. This approach has been used previously for elemental solids and is now extended to amorphized binary compounds. The experimental values of IMFP obtained in both laboratories exhibited a reasonable agreement with the available literature data in the 0.1-3.0 keV energy range. With respect to the information depth of EPES, the experimental results refer to the bulk composition within a reasonable extent.

Original languageEnglish
Pages (from-to)177-185
Number of pages9
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume87
Issue number3
Publication statusPublished - Feb 1998

Fingerprint

Surface cleaning
Electron spectroscopy
Ion bombardment
mean free path
cleaning
electron spectroscopy
bombardment
Electrons
ions
electrons
Elastic scattering
Depth profiling
Argon
Electron energy loss spectroscopy
Multiple scattering
Surface structure
Spectrometers
Cleaning
X ray photoelectron spectroscopy
Calibration

Keywords

  • Elastic peak electron spectroscopy
  • Inelastic mean free path
  • Surface cleaning

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics
  • Surfaces and Interfaces

Cite this

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title = "Determination of the inelastic mean free path of electrons in GaAs and InP after surface cleaning by ion bombardment using elastic peak electron spectroscopy",
abstract = "The inelastic mean free path (IMFP) of electrons is an important material parameter needed for quantitative AES, EELS and non-destructive depth profiling. The distinction between the terms for IMFP and the attenuation length (AL) has been established by ASTM standards. A practical experimental method for determining values of the IMFP is elastic peak electron spectroscopy (EPES). In this method, experimentally determined ratios of elastically backscattered electrons from test surfaces and from a Ni reference standard are compared with the values evaluated theoretically. The present paper reports systematic measurements of the IMFP by EPES for GaAs and InP. They are carried out in two laboratories using two different electron spectrometers: a CMA in Budapest and DCMA in Warsaw. Prior to measurements, the samples were amorphized by high-energy Ar+ ions (100-400 keV), and the surface composition was determined by quantitative XPS. Argon cleaning produces enrichment of samples in the surface layer in Ga (80{\%}) and In (70{\%}), respectively. The experiments refer to a such modified sample surface that was considered in Monte Carlo calculations. The experimental data were analyzed using calibration curves from Monte Carlo calculations which account for multiple elastic scattering events. This approach has been used previously for elemental solids and is now extended to amorphized binary compounds. The experimental values of IMFP obtained in both laboratories exhibited a reasonable agreement with the available literature data in the 0.1-3.0 keV energy range. With respect to the information depth of EPES, the experimental results refer to the bulk composition within a reasonable extent.",
keywords = "Elastic peak electron spectroscopy, Inelastic mean free path, Surface cleaning",
author = "L. Zommer and B. Lesiak and A. Jablonski and G. Gergely and M. Menyh{\'a}rd and A. Sulyok and S. Gurban",
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T1 - Determination of the inelastic mean free path of electrons in GaAs and InP after surface cleaning by ion bombardment using elastic peak electron spectroscopy

AU - Zommer, L.

AU - Lesiak, B.

AU - Jablonski, A.

AU - Gergely, G.

AU - Menyhárd, M.

AU - Sulyok, A.

AU - Gurban, S.

PY - 1998/2

Y1 - 1998/2

N2 - The inelastic mean free path (IMFP) of electrons is an important material parameter needed for quantitative AES, EELS and non-destructive depth profiling. The distinction between the terms for IMFP and the attenuation length (AL) has been established by ASTM standards. A practical experimental method for determining values of the IMFP is elastic peak electron spectroscopy (EPES). In this method, experimentally determined ratios of elastically backscattered electrons from test surfaces and from a Ni reference standard are compared with the values evaluated theoretically. The present paper reports systematic measurements of the IMFP by EPES for GaAs and InP. They are carried out in two laboratories using two different electron spectrometers: a CMA in Budapest and DCMA in Warsaw. Prior to measurements, the samples were amorphized by high-energy Ar+ ions (100-400 keV), and the surface composition was determined by quantitative XPS. Argon cleaning produces enrichment of samples in the surface layer in Ga (80%) and In (70%), respectively. The experiments refer to a such modified sample surface that was considered in Monte Carlo calculations. The experimental data were analyzed using calibration curves from Monte Carlo calculations which account for multiple elastic scattering events. This approach has been used previously for elemental solids and is now extended to amorphized binary compounds. The experimental values of IMFP obtained in both laboratories exhibited a reasonable agreement with the available literature data in the 0.1-3.0 keV energy range. With respect to the information depth of EPES, the experimental results refer to the bulk composition within a reasonable extent.

AB - The inelastic mean free path (IMFP) of electrons is an important material parameter needed for quantitative AES, EELS and non-destructive depth profiling. The distinction between the terms for IMFP and the attenuation length (AL) has been established by ASTM standards. A practical experimental method for determining values of the IMFP is elastic peak electron spectroscopy (EPES). In this method, experimentally determined ratios of elastically backscattered electrons from test surfaces and from a Ni reference standard are compared with the values evaluated theoretically. The present paper reports systematic measurements of the IMFP by EPES for GaAs and InP. They are carried out in two laboratories using two different electron spectrometers: a CMA in Budapest and DCMA in Warsaw. Prior to measurements, the samples were amorphized by high-energy Ar+ ions (100-400 keV), and the surface composition was determined by quantitative XPS. Argon cleaning produces enrichment of samples in the surface layer in Ga (80%) and In (70%), respectively. The experiments refer to a such modified sample surface that was considered in Monte Carlo calculations. The experimental data were analyzed using calibration curves from Monte Carlo calculations which account for multiple elastic scattering events. This approach has been used previously for elemental solids and is now extended to amorphized binary compounds. The experimental values of IMFP obtained in both laboratories exhibited a reasonable agreement with the available literature data in the 0.1-3.0 keV energy range. With respect to the information depth of EPES, the experimental results refer to the bulk composition within a reasonable extent.

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