Determination of the density of silicon–nitride thin films by ion-beam analytical techniques (RBS, PIXE, STIM)

Robert Huszank, László Csedreki, Zsófia Kertész, Zsófia Török

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

This work presents the investigation of some commercially available and commonly used Si3N4 foils prepared with LPCVD technique. The density and the stoichiometry of these films were determined by Rutherford backscattering spectroscopy and profilometry, while the study of impurities was achieved with particle induced X-ray emission method. It was found that the density of the studied Si3N4 films is significantly less (~2.71 g cm−3), while the stoichiometry is close to the values of the bulk material. The results were verified by measuring the ion energy loss through the films by scanning transmission ion microscopy.

Original languageEnglish
Pages (from-to)341-346
Number of pages6
JournalJournal of Radioanalytical and Nuclear Chemistry
Volume307
Issue number1
DOIs
Publication statusPublished - Jan 1 2016

Keywords

  • Particle induced X-ray emission (PIXE)
  • Rutherford backscattering spectroscopy (RBS)
  • Scanning transmission ion microscopy (STIM)
  • Silicon–nitride film

ASJC Scopus subject areas

  • Analytical Chemistry
  • Nuclear Energy and Engineering
  • Radiology Nuclear Medicine and imaging
  • Pollution
  • Spectroscopy
  • Public Health, Environmental and Occupational Health
  • Health, Toxicology and Mutagenesis

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