Abstract
Ion-implantation induced disorder changes the complex refractive index of the implanted semiconductor layers. In turn the disorder can be detected by optical methods such as spectroscopic ellipsometry (SE). The prerequisite of the proper interpretation of SE data measured on partially ion damaged SiC is the knowledge of the complex dielectric function of completely ion implanted amorphized SiC. In the present work, the wavelength dependence of the complex dielectric function (ε= ε1 + iε2) was extracted from data measured by multiple angle of incidence SE in the wavelength range 270-700 nm on ion implantation amorphized SiC.
| Original language | English |
|---|---|
| Pages (from-to) | 277-281 |
| Number of pages | 5 |
| Journal | Physica Status Solidi (A) Applied Research |
| Volume | 195 |
| Issue number | 1 SPEC |
| DOIs | |
| Publication status | Published - Jan 2003 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
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Determination of the complex dielectric function of ion implanted amorphous SiC by spectroscopic ellipsometry. / Shaaban, E. R.; Lohner, T.; Petrik, P.; Khánh, N. Q.; Fried, M.; Polgár, O.; Gyulai, J.
In: Physica Status Solidi (A) Applied Research, Vol. 195, No. 1 SPEC, 01.2003, p. 277-281.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Determination of the complex dielectric function of ion implanted amorphous SiC by spectroscopic ellipsometry
AU - Shaaban, E. R.
AU - Lohner, T.
AU - Petrik, P.
AU - Khánh, N. Q.
AU - Fried, M.
AU - Polgár, O.
AU - Gyulai, J.
PY - 2003/1
Y1 - 2003/1
N2 - Ion-implantation induced disorder changes the complex refractive index of the implanted semiconductor layers. In turn the disorder can be detected by optical methods such as spectroscopic ellipsometry (SE). The prerequisite of the proper interpretation of SE data measured on partially ion damaged SiC is the knowledge of the complex dielectric function of completely ion implanted amorphized SiC. In the present work, the wavelength dependence of the complex dielectric function (ε= ε1 + iε2) was extracted from data measured by multiple angle of incidence SE in the wavelength range 270-700 nm on ion implantation amorphized SiC.
AB - Ion-implantation induced disorder changes the complex refractive index of the implanted semiconductor layers. In turn the disorder can be detected by optical methods such as spectroscopic ellipsometry (SE). The prerequisite of the proper interpretation of SE data measured on partially ion damaged SiC is the knowledge of the complex dielectric function of completely ion implanted amorphized SiC. In the present work, the wavelength dependence of the complex dielectric function (ε= ε1 + iε2) was extracted from data measured by multiple angle of incidence SE in the wavelength range 270-700 nm on ion implantation amorphized SiC.
UR - http://www.scopus.com/inward/record.url?scp=0037279822&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037279822&partnerID=8YFLogxK
U2 - 10.1002/pssa.200306277
DO - 10.1002/pssa.200306277
M3 - Article
AN - SCOPUS:0037279822
VL - 195
SP - 277
EP - 281
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
SN - 0031-8965
IS - 1 SPEC
ER -