Determination of the complex dielectric function of ion implanted amorphous SiC by spectroscopic ellipsometry

E. R. Shaaban, T. Lohner, P. Petrik, N. Q. Khánh, M. Fried, O. Polgár, J. Gyulai

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Ion-implantation induced disorder changes the complex refractive index of the implanted semiconductor layers. In turn the disorder can be detected by optical methods such as spectroscopic ellipsometry (SE). The prerequisite of the proper interpretation of SE data measured on partially ion damaged SiC is the knowledge of the complex dielectric function of completely ion implanted amorphized SiC. In the present work, the wavelength dependence of the complex dielectric function (ε= ε1 + iε2) was extracted from data measured by multiple angle of incidence SE in the wavelength range 270-700 nm on ion implantation amorphized SiC.

Original languageEnglish
Pages (from-to)277-281
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume195
Issue number1 SPEC
DOIs
Publication statusPublished - Jan 2003

Fingerprint

Spectroscopic ellipsometry
ellipsometry
Ions
Ion implantation
ion implantation
disorders
Wavelength
ions
wavelengths
Refractive index
incidence
optics
refractivity
Semiconductor materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Determination of the complex dielectric function of ion implanted amorphous SiC by spectroscopic ellipsometry. / Shaaban, E. R.; Lohner, T.; Petrik, P.; Khánh, N. Q.; Fried, M.; Polgár, O.; Gyulai, J.

In: Physica Status Solidi (A) Applied Research, Vol. 195, No. 1 SPEC, 01.2003, p. 277-281.

Research output: Contribution to journalArticle

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