Determination of SiO2-Si interface trap level density (Dit) by vibrating capacitor method

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The interface trap level density, Dit, is one of the most important parameters of the SiO2-Si layer structure. C-V methods are suitable for measuring Dit. However, the importance of non-destructive, touch-free methods has recently been increasing. Contactless methods use capacitive coupling. Vibration (vibrating capacitor), temperature difference and light are used for surface excitation; interface trap level density can be determined from the change in the value of oxide surface potential (work function). The present article discusses a new method for determining SiO2-Si interface trap level density, Dit, by the vibrating capacitor method, focussing on theory, application and evaluation of the results. Measured potential maps are presented, and the results are converted into Dit distributions as examples for the application of this method.

Original languageEnglish
Pages (from-to)1825-1831
Number of pages7
JournalSolid-State Electronics
Volume44
Issue number10
DOIs
Publication statusPublished - Oct 1 2000

Fingerprint

capacitors
Capacitors
traps
Surface potential
Oxides
touch
Temperature
density distribution
temperature gradients
vibration
oxides
evaluation
excitation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Determination of SiO2-Si interface trap level density (Dit) by vibrating capacitor method. / Mizsei, J.

In: Solid-State Electronics, Vol. 44, No. 10, 01.10.2000, p. 1825-1831.

Research output: Contribution to journalArticle

@article{a62ec780936d4f8b85ba2a14d420b2f3,
title = "Determination of SiO2-Si interface trap level density (Dit) by vibrating capacitor method",
abstract = "The interface trap level density, Dit, is one of the most important parameters of the SiO2-Si layer structure. C-V methods are suitable for measuring Dit. However, the importance of non-destructive, touch-free methods has recently been increasing. Contactless methods use capacitive coupling. Vibration (vibrating capacitor), temperature difference and light are used for surface excitation; interface trap level density can be determined from the change in the value of oxide surface potential (work function). The present article discusses a new method for determining SiO2-Si interface trap level density, Dit, by the vibrating capacitor method, focussing on theory, application and evaluation of the results. Measured potential maps are presented, and the results are converted into Dit distributions as examples for the application of this method.",
author = "J. Mizsei",
year = "2000",
month = "10",
day = "1",
doi = "10.1016/S0038-1101(00)00119-2",
language = "English",
volume = "44",
pages = "1825--1831",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "10",

}

TY - JOUR

T1 - Determination of SiO2-Si interface trap level density (Dit) by vibrating capacitor method

AU - Mizsei, J.

PY - 2000/10/1

Y1 - 2000/10/1

N2 - The interface trap level density, Dit, is one of the most important parameters of the SiO2-Si layer structure. C-V methods are suitable for measuring Dit. However, the importance of non-destructive, touch-free methods has recently been increasing. Contactless methods use capacitive coupling. Vibration (vibrating capacitor), temperature difference and light are used for surface excitation; interface trap level density can be determined from the change in the value of oxide surface potential (work function). The present article discusses a new method for determining SiO2-Si interface trap level density, Dit, by the vibrating capacitor method, focussing on theory, application and evaluation of the results. Measured potential maps are presented, and the results are converted into Dit distributions as examples for the application of this method.

AB - The interface trap level density, Dit, is one of the most important parameters of the SiO2-Si layer structure. C-V methods are suitable for measuring Dit. However, the importance of non-destructive, touch-free methods has recently been increasing. Contactless methods use capacitive coupling. Vibration (vibrating capacitor), temperature difference and light are used for surface excitation; interface trap level density can be determined from the change in the value of oxide surface potential (work function). The present article discusses a new method for determining SiO2-Si interface trap level density, Dit, by the vibrating capacitor method, focussing on theory, application and evaluation of the results. Measured potential maps are presented, and the results are converted into Dit distributions as examples for the application of this method.

UR - http://www.scopus.com/inward/record.url?scp=0034291082&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034291082&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(00)00119-2

DO - 10.1016/S0038-1101(00)00119-2

M3 - Article

VL - 44

SP - 1825

EP - 1831

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 10

ER -