Determination of relative sputtering yield of Cr/Si

L. Kotis, M. Menyhárd, L. Tóth, A. Zalar, P. Panjan

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

To understand the various effects induced by the ion bombardment one needs to know the sputtering yields for the sputtering conditions applied. Experimental data are rare however, and the reliability of the calculated values should be checked. Thus the measurement of sputtering yield is important. Recently, we have published a work where we have applied AES depth profiling to determine the relative sputtering yield [Barna A, Menyhard M, Kotis L, Kovacs GyJ, Radnoczi G, Zalar A, et al. J Appl Phys 2005; 98:024901-6]. In this communication, we will describe the method in a more detailed way discussing the reliability as well. It will be applied for Si/Cr multilayer structure (similar to those used in devices of integrated electronics) consisting three Si and three Cr layers sputter deposited onto smooth silicon substrates. The ion energy and projectile were 1 keV and Ar+, respectively. The angle of incidence varied in the range 22°-87°. The reliability of the derived relative sputtering yields will be discussed and will be compared with those provided by the available simulation.

Original languageEnglish
Pages (from-to)178-181
Number of pages4
JournalVacuum
Volume82
Issue number2 SPEC. ISS.
DOIs
Publication statusPublished - Oct 29 2007

Fingerprint

Sputtering
sputtering
Depth profiling
Silicon
Projectiles
Ion bombardment
laminates
bombardment
projectiles
Multilayers
ions
Electronic equipment
incidence
communication
Ions
Communication
silicon
Substrates
electronics
simulation

Keywords

  • AES depth profiling
  • Sputtering yield

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Determination of relative sputtering yield of Cr/Si. / Kotis, L.; Menyhárd, M.; Tóth, L.; Zalar, A.; Panjan, P.

In: Vacuum, Vol. 82, No. 2 SPEC. ISS., 29.10.2007, p. 178-181.

Research output: Contribution to journalArticle

Kotis, L. ; Menyhárd, M. ; Tóth, L. ; Zalar, A. ; Panjan, P. / Determination of relative sputtering yield of Cr/Si. In: Vacuum. 2007 ; Vol. 82, No. 2 SPEC. ISS. pp. 178-181.
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