Determination of migration of ion-implanted helium in silica by proton backscattering spectrometry

G. Szakács, E. Szilágyi, F. Pászti, E. Kótai

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Understanding the processes caused by ion implantation of light ions in dielectric materials such as silica is important for developing the diagnostic systems used in fusion and fission environments. Recently, it has been shown that ion-implanted helium is able to escape from SiO2 films. To study this process in details, helium was implanted into the central part of a buried SiO2 island up to a fluence of 4 × 1017 He/cm2. The implanted helium could be detected in the SiO2 island, if the oxide was insulated properly from the vacuum. The shape of the helium depth distributions was far from SRIM simulation because helium distributed in the whole 1 μm thick oxide layer. After the ion implantation, helium was observed only on the implanted spot. After nine months the implanted helium filled out the whole oxide island as it was expected from the high diffusivity.

Original languageEnglish
Pages (from-to)1382-1385
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume266
Issue number8
DOIs
Publication statusPublished - Apr 2008

Fingerprint

Helium
Backscattering
Silicon Dioxide
Spectrometry
Protons
backscattering
helium
Silica
Ions
silicon dioxide
protons
spectroscopy
ions
Oxides
Ion implantation
oxides
ion implantation
light ions
escape
diffusivity

Keywords

  • He retention
  • Ion implantation
  • Proton elastic scattering

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

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abstract = "Understanding the processes caused by ion implantation of light ions in dielectric materials such as silica is important for developing the diagnostic systems used in fusion and fission environments. Recently, it has been shown that ion-implanted helium is able to escape from SiO2 films. To study this process in details, helium was implanted into the central part of a buried SiO2 island up to a fluence of 4 × 1017 He/cm2. The implanted helium could be detected in the SiO2 island, if the oxide was insulated properly from the vacuum. The shape of the helium depth distributions was far from SRIM simulation because helium distributed in the whole 1 μm thick oxide layer. After the ion implantation, helium was observed only on the implanted spot. After nine months the implanted helium filled out the whole oxide island as it was expected from the high diffusivity.",
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T1 - Determination of migration of ion-implanted helium in silica by proton backscattering spectrometry

AU - Szakács, G.

AU - Szilágyi, E.

AU - Pászti, F.

AU - Kótai, E.

PY - 2008/4

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N2 - Understanding the processes caused by ion implantation of light ions in dielectric materials such as silica is important for developing the diagnostic systems used in fusion and fission environments. Recently, it has been shown that ion-implanted helium is able to escape from SiO2 films. To study this process in details, helium was implanted into the central part of a buried SiO2 island up to a fluence of 4 × 1017 He/cm2. The implanted helium could be detected in the SiO2 island, if the oxide was insulated properly from the vacuum. The shape of the helium depth distributions was far from SRIM simulation because helium distributed in the whole 1 μm thick oxide layer. After the ion implantation, helium was observed only on the implanted spot. After nine months the implanted helium filled out the whole oxide island as it was expected from the high diffusivity.

AB - Understanding the processes caused by ion implantation of light ions in dielectric materials such as silica is important for developing the diagnostic systems used in fusion and fission environments. Recently, it has been shown that ion-implanted helium is able to escape from SiO2 films. To study this process in details, helium was implanted into the central part of a buried SiO2 island up to a fluence of 4 × 1017 He/cm2. The implanted helium could be detected in the SiO2 island, if the oxide was insulated properly from the vacuum. The shape of the helium depth distributions was far from SRIM simulation because helium distributed in the whole 1 μm thick oxide layer. After the ion implantation, helium was observed only on the implanted spot. After nine months the implanted helium filled out the whole oxide island as it was expected from the high diffusivity.

KW - He retention

KW - Ion implantation

KW - Proton elastic scattering

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