Determination of ion track and shapes with damage simulations on the base of ellipsometric and backscattering spectrometric measurements

O. Polgár, M. Fried, N. Khanh, P. Petrik, I. Bársony

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4 Citations (Scopus)

Abstract

On the base of geometrical and statistical considerations a damage simulator was created in order to determine the ion track-radius and -shape of ion-implantation caused damage in single-crystalline Si. Damage vs. dose curves calculated by spectroscopic ellipsometry (SE) and Rutherford backscattering/channeling spectrometry (RBS/C) measurements, using different doses of 100 keV Xe implantation, gave information about the damage profile in depth. Both methods are required, because of dose-dependent discrepancies of SE compared with RBS/C [Fried et al., Thin Solid Films 455/456, 404 (2004)]. Different kinds of damage models were investigated to calculate the ion track-radius and to describe the damages in depth and the shape of ion track. Comparing directly the simulated and the measured damage vs. dose curves, the damage function and the other simulation parameters were optimized and hence the ion track size and even the shape can be determined. The dose dependent mean size of the unchanged crystalline regions, obtained from the simulation was correlated with the complex dielectric functions, obtained from the SE analysis. The results clearly show the effect of decreasing size of the unchanged crystalline regions.

Original languageEnglish
Pages (from-to)1354-1357
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number5
DOIs
Publication statusPublished - 2008

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backscattering
damage
ions
dosage
simulation
ellipsometry
radii
curves
spectroscopy
simulators
ion implantation
implantation
profiles

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

@article{5a64c546663f46e4bce54f20f0adf540,
title = "Determination of ion track and shapes with damage simulations on the base of ellipsometric and backscattering spectrometric measurements",
abstract = "On the base of geometrical and statistical considerations a damage simulator was created in order to determine the ion track-radius and -shape of ion-implantation caused damage in single-crystalline Si. Damage vs. dose curves calculated by spectroscopic ellipsometry (SE) and Rutherford backscattering/channeling spectrometry (RBS/C) measurements, using different doses of 100 keV Xe implantation, gave information about the damage profile in depth. Both methods are required, because of dose-dependent discrepancies of SE compared with RBS/C [Fried et al., Thin Solid Films 455/456, 404 (2004)]. Different kinds of damage models were investigated to calculate the ion track-radius and to describe the damages in depth and the shape of ion track. Comparing directly the simulated and the measured damage vs. dose curves, the damage function and the other simulation parameters were optimized and hence the ion track size and even the shape can be determined. The dose dependent mean size of the unchanged crystalline regions, obtained from the simulation was correlated with the complex dielectric functions, obtained from the SE analysis. The results clearly show the effect of decreasing size of the unchanged crystalline regions.",
author = "O. Polg{\'a}r and M. Fried and N. Khanh and P. Petrik and I. B{\'a}rsony",
year = "2008",
doi = "10.1002/pssc.200777864",
language = "English",
volume = "5",
pages = "1354--1357",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "5",

}

TY - JOUR

T1 - Determination of ion track and shapes with damage simulations on the base of ellipsometric and backscattering spectrometric measurements

AU - Polgár, O.

AU - Fried, M.

AU - Khanh, N.

AU - Petrik, P.

AU - Bársony, I.

PY - 2008

Y1 - 2008

N2 - On the base of geometrical and statistical considerations a damage simulator was created in order to determine the ion track-radius and -shape of ion-implantation caused damage in single-crystalline Si. Damage vs. dose curves calculated by spectroscopic ellipsometry (SE) and Rutherford backscattering/channeling spectrometry (RBS/C) measurements, using different doses of 100 keV Xe implantation, gave information about the damage profile in depth. Both methods are required, because of dose-dependent discrepancies of SE compared with RBS/C [Fried et al., Thin Solid Films 455/456, 404 (2004)]. Different kinds of damage models were investigated to calculate the ion track-radius and to describe the damages in depth and the shape of ion track. Comparing directly the simulated and the measured damage vs. dose curves, the damage function and the other simulation parameters were optimized and hence the ion track size and even the shape can be determined. The dose dependent mean size of the unchanged crystalline regions, obtained from the simulation was correlated with the complex dielectric functions, obtained from the SE analysis. The results clearly show the effect of decreasing size of the unchanged crystalline regions.

AB - On the base of geometrical and statistical considerations a damage simulator was created in order to determine the ion track-radius and -shape of ion-implantation caused damage in single-crystalline Si. Damage vs. dose curves calculated by spectroscopic ellipsometry (SE) and Rutherford backscattering/channeling spectrometry (RBS/C) measurements, using different doses of 100 keV Xe implantation, gave information about the damage profile in depth. Both methods are required, because of dose-dependent discrepancies of SE compared with RBS/C [Fried et al., Thin Solid Films 455/456, 404 (2004)]. Different kinds of damage models were investigated to calculate the ion track-radius and to describe the damages in depth and the shape of ion track. Comparing directly the simulated and the measured damage vs. dose curves, the damage function and the other simulation parameters were optimized and hence the ion track size and even the shape can be determined. The dose dependent mean size of the unchanged crystalline regions, obtained from the simulation was correlated with the complex dielectric functions, obtained from the SE analysis. The results clearly show the effect of decreasing size of the unchanged crystalline regions.

UR - http://www.scopus.com/inward/record.url?scp=77951121905&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951121905&partnerID=8YFLogxK

U2 - 10.1002/pssc.200777864

DO - 10.1002/pssc.200777864

M3 - Article

AN - SCOPUS:77951121905

VL - 5

SP - 1354

EP - 1357

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 5

ER -