Determination of diffusion lengths of minority carriers in Hg 1-xCdxTe (x-0.2-0.3) by EBIC method

J. Franc, E. Belas, R. Grill, A. Tóth, H. Sitter, P. Moravec, P. Höschl

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Diffusion lengths of minority electrons and holes in Hg 1-xCdxTe (x∼ 0.2-0.3) single crystals produced by the diffusion controlled Bridgman growth from melt of constant composition were studied. Bulk p-HgCdTe samples were etched by low energy (750eV) Ar ions in the VEECO ion etching system or in Ar plasma in a plasma etching reactor. As a result of this treatment a deep p-n junction was created in the samples. Secondary-electron and electron beam induced current (EBIC) images were used to determine the position of the p-n junction. The obtained EBIC data were then used for evaluation of a set of minority carrier diffusion lengths at temperatures 140-270K.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Pages207-215
Number of pages9
Volume3182
DOIs
Publication statusPublished - 1997
EventMaterial Science and Material Properties for Infrared Optoelectronics - Uzhgorod, Ukraine
Duration: Sep 30 1996Sep 30 1996

Other

OtherMaterial Science and Material Properties for Infrared Optoelectronics
CountryUkraine
CityUzhgorod
Period9/30/969/30/96

Fingerprint

Induced currents
Etching
Electron Beam
diffusion length
minority carriers
p-n junctions
Electron beams
Plasma
electron beams
Electron
Controlled Diffusions
HgCdTe
plasma etching
minorities
Single Crystal
Ions
Reactor
ions
electrons
Electrons

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Franc, J., Belas, E., Grill, R., Tóth, A., Sitter, H., Moravec, P., & Höschl, P. (1997). Determination of diffusion lengths of minority carriers in Hg 1-xCdxTe (x-0.2-0.3) by EBIC method. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3182, pp. 207-215) https://doi.org/10.1117/12.280429

Determination of diffusion lengths of minority carriers in Hg 1-xCdxTe (x-0.2-0.3) by EBIC method. / Franc, J.; Belas, E.; Grill, R.; Tóth, A.; Sitter, H.; Moravec, P.; Höschl, P.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3182 1997. p. 207-215.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Franc, J, Belas, E, Grill, R, Tóth, A, Sitter, H, Moravec, P & Höschl, P 1997, Determination of diffusion lengths of minority carriers in Hg 1-xCdxTe (x-0.2-0.3) by EBIC method. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 3182, pp. 207-215, Material Science and Material Properties for Infrared Optoelectronics, Uzhgorod, Ukraine, 9/30/96. https://doi.org/10.1117/12.280429
Franc J, Belas E, Grill R, Tóth A, Sitter H, Moravec P et al. Determination of diffusion lengths of minority carriers in Hg 1-xCdxTe (x-0.2-0.3) by EBIC method. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3182. 1997. p. 207-215 https://doi.org/10.1117/12.280429
Franc, J. ; Belas, E. ; Grill, R. ; Tóth, A. ; Sitter, H. ; Moravec, P. ; Höschl, P. / Determination of diffusion lengths of minority carriers in Hg 1-xCdxTe (x-0.2-0.3) by EBIC method. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3182 1997. pp. 207-215
@inproceedings{ac4452fbab154f03b37f87c522bf52c8,
title = "Determination of diffusion lengths of minority carriers in Hg 1-xCdxTe (x-0.2-0.3) by EBIC method",
abstract = "Diffusion lengths of minority electrons and holes in Hg 1-xCdxTe (x∼ 0.2-0.3) single crystals produced by the diffusion controlled Bridgman growth from melt of constant composition were studied. Bulk p-HgCdTe samples were etched by low energy (750eV) Ar ions in the VEECO ion etching system or in Ar plasma in a plasma etching reactor. As a result of this treatment a deep p-n junction was created in the samples. Secondary-electron and electron beam induced current (EBIC) images were used to determine the position of the p-n junction. The obtained EBIC data were then used for evaluation of a set of minority carrier diffusion lengths at temperatures 140-270K.",
author = "J. Franc and E. Belas and R. Grill and A. T{\'o}th and H. Sitter and P. Moravec and P. H{\"o}schl",
year = "1997",
doi = "10.1117/12.280429",
language = "English",
volume = "3182",
pages = "207--215",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Determination of diffusion lengths of minority carriers in Hg 1-xCdxTe (x-0.2-0.3) by EBIC method

AU - Franc, J.

AU - Belas, E.

AU - Grill, R.

AU - Tóth, A.

AU - Sitter, H.

AU - Moravec, P.

AU - Höschl, P.

PY - 1997

Y1 - 1997

N2 - Diffusion lengths of minority electrons and holes in Hg 1-xCdxTe (x∼ 0.2-0.3) single crystals produced by the diffusion controlled Bridgman growth from melt of constant composition were studied. Bulk p-HgCdTe samples were etched by low energy (750eV) Ar ions in the VEECO ion etching system or in Ar plasma in a plasma etching reactor. As a result of this treatment a deep p-n junction was created in the samples. Secondary-electron and electron beam induced current (EBIC) images were used to determine the position of the p-n junction. The obtained EBIC data were then used for evaluation of a set of minority carrier diffusion lengths at temperatures 140-270K.

AB - Diffusion lengths of minority electrons and holes in Hg 1-xCdxTe (x∼ 0.2-0.3) single crystals produced by the diffusion controlled Bridgman growth from melt of constant composition were studied. Bulk p-HgCdTe samples were etched by low energy (750eV) Ar ions in the VEECO ion etching system or in Ar plasma in a plasma etching reactor. As a result of this treatment a deep p-n junction was created in the samples. Secondary-electron and electron beam induced current (EBIC) images were used to determine the position of the p-n junction. The obtained EBIC data were then used for evaluation of a set of minority carrier diffusion lengths at temperatures 140-270K.

UR - http://www.scopus.com/inward/record.url?scp=0007009851&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0007009851&partnerID=8YFLogxK

U2 - 10.1117/12.280429

DO - 10.1117/12.280429

M3 - Conference contribution

VL - 3182

SP - 207

EP - 215

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -