Determination of deformation induced by thin film residual stress in structures of millimeter size

I. E. Lukács, Z. Vízváry, P. Fürjes, F. Riesz, C. Dücsö, I. Bársony

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Abstract

An optical method, Makyoh topography (MT), was presented for the measurement of the deformation of small-size square-type, self supporting SiNx and Si membranes coated on one side by the SiNx films fabricated on Si substrates. The thermal expansion coefficient of SiNx was extracted and the results were compared with finite-element (FE) modeling of the structure. Results showed a good agreement the MT measurements for the centre deflection of the unsupported SiNx membranes and the FE calculations.

Original languageEnglish
Pages (from-to)625-627
Number of pages3
JournalAdvanced Engineering Materials
Volume4
Issue number8
DOIs
Publication statusPublished - Aug 1 2002

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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