Determination of boron range distribution in ion-implanted silicon by the10B(n, α)7 Li reaction

A. Z. Nagy, J. Bogáncs, J. Gyulai, A. Csoke, V. Nazarov, Z. Seres, A. Szabo, Yu Yazvitsky

Research output: Contribution to journalArticle

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Abstract

A measuring technique based on the alpha particles being released from the10B(n, α) nuclear reaction and using the time-of-flight technique at a periodically pulsing reactor was developed. Non-destructive determination for the range distribution of boron impurities in ion-implanted silicon have been performed. Projected ranges obtained in the energy region 20-80 keV are compared to calculated results and to other experiments. Examples are shown for some typical boron distributions before and after annealing the sample.

Original languageEnglish
Pages (from-to)19-27
Number of pages9
JournalJournal of Radioanalytical Chemistry
Volume38
Issue number1-2
DOIs
Publication statusPublished - 1977

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Boron
Silicon
Alpha Particles
Ions
Alpha particles
Nuclear reactions
Annealing
Impurities
Experiments

ASJC Scopus subject areas

  • Molecular Medicine
  • Radiology Nuclear Medicine and imaging

Cite this

Determination of boron range distribution in ion-implanted silicon by the10B(n, α)7 Li reaction. / Nagy, A. Z.; Bogáncs, J.; Gyulai, J.; Csoke, A.; Nazarov, V.; Seres, Z.; Szabo, A.; Yazvitsky, Yu.

In: Journal of Radioanalytical Chemistry, Vol. 38, No. 1-2, 1977, p. 19-27.

Research output: Contribution to journalArticle

Nagy, A. Z. ; Bogáncs, J. ; Gyulai, J. ; Csoke, A. ; Nazarov, V. ; Seres, Z. ; Szabo, A. ; Yazvitsky, Yu. / Determination of boron range distribution in ion-implanted silicon by the10B(n, α)7 Li reaction. In: Journal of Radioanalytical Chemistry. 1977 ; Vol. 38, No. 1-2. pp. 19-27.
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AU - Szabo, A.

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