Determination of Γ-X transfer rates in type II (Al)GaAs/AlAs superlattices

J. Feldmann, R. Sattmann, G. Peter, E. O. Göbel, J. Nunnenkamp, J. Kuhl, J. Hebling, K. Ploog, R. Cingolani, R. Muralidharan, P. Dawson, C. T. Foxon

Research output: Contribution to journalArticle

2 Citations (Scopus)


We have experimentally determined the Γ-X transfer rates in a type II GaAs/AlAs short period superlattice as well as in a type II AlxGa1-xAs/AlAs superlattice. Transfer times on a subpicosecond- and picosecond-timescale are observed depending on the layer-thickness. We conclude from temperature dependent measurements that for thicker layers electron-phonon scattering is the dominant scattering mechanism whereas for thinner layers interface roughness scattering may become dominant.

Original languageEnglish
Pages (from-to)452-455
Number of pages4
JournalSurface Science
Issue number1-3
Publication statusPublished - Apr 2 1990

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Determination of Γ-X transfer rates in type II (Al)GaAs/AlAs superlattices'. Together they form a unique fingerprint.

  • Cite this

    Feldmann, J., Sattmann, R., Peter, G., Göbel, E. O., Nunnenkamp, J., Kuhl, J., Hebling, J., Ploog, K., Cingolani, R., Muralidharan, R., Dawson, P., & Foxon, C. T. (1990). Determination of Γ-X transfer rates in type II (Al)GaAs/AlAs superlattices. Surface Science, 229(1-3), 452-455.