Determination of Γ-X transfer rates in type II (Al)GaAs/AlAs superlattices

J. Feldmann, R. Sattmann, G. Peter, E. O. Göbel, J. Nunnenkamp, J. Kuhl, J. Hebling, K. Ploog, R. Cingolani, R. Muralidharan, P. Dawson, C. T. Foxon

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Abstract

We have experimentally determined the Γ-X transfer rates in a type II GaAs/AlAs short period superlattice as well as in a type II AlxGa1-xAs/AlAs superlattice. Transfer times on a subpicosecond- and picosecond-timescale are observed depending on the layer-thickness. We conclude from temperature dependent measurements that for thicker layers electron-phonon scattering is the dominant scattering mechanism whereas for thinner layers interface roughness scattering may become dominant.

Original languageEnglish
Pages (from-to)452-455
Number of pages4
JournalSurface Science
Volume229
Issue number1-3
DOIs
Publication statusPublished - Apr 2 1990

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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    Feldmann, J., Sattmann, R., Peter, G., Göbel, E. O., Nunnenkamp, J., Kuhl, J., Hebling, J., Ploog, K., Cingolani, R., Muralidharan, R., Dawson, P., & Foxon, C. T. (1990). Determination of Γ-X transfer rates in type II (Al)GaAs/AlAs superlattices. Surface Science, 229(1-3), 452-455. https://doi.org/10.1016/0039-6028(90)90928-2