Densification and noble gas retention of ion-implanted porous silicon

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

To investigate the gas retention behaviour of porous materials, 500 keV He and 100 keV Ar ion implantations were carried out into porous silicon samples of columnar structure. Samples of different porosities were irradiated using a current density of ∼ 6 × 1012 ions/cm2/s up to a fluence of 10 × 1017 and 10.3 × 1016 ions/cm2, for He+ and Ar+, respectively. The quantity of the retained gas was determined by Rutherford backscattering spectrometry (RBS). It was found that in contrast to the case of compact materials, the gas retention is negligible for the lowest fluence implantations (∼ 5 × 1016 and ∼ 1 × 1015 ions/cm2, for He and Ar respectively). At higher fluences the retention rate gradually increases, approaching the rate of full retention. For He implantation the retention behaviour shows a strong porosity dependence. The above phenomenon is accompanied by the densification of the material as it was observed by scanning electron microscope on the fractured samples and also indicated by the gradual depression of the whole implanted area according to surface profiler measurements. The densification grows until the whole implanted layer (from the surface to the implanted range) almost completely transforms into compact material. Possible mechanisms responsible for the above phenomena are also discussed.

Original languageEnglish
Pages (from-to)253-259
Number of pages7
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume117
Issue number3
DOIs
Publication statusPublished - Sep 1996

Fingerprint

Noble Gases
Porous silicon
densification
Inert gases
porous silicon
Densification
rare gases
Gases
Ions
Ion implantation
Porosity
fluence
gases
ions
Surface measurement
Rutherford backscattering spectroscopy
implantation
Spectrometry
Porous materials
porosity

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

@article{6a6ef8cfbdd24e0db15e4f452faa6c2d,
title = "Densification and noble gas retention of ion-implanted porous silicon",
abstract = "To investigate the gas retention behaviour of porous materials, 500 keV He and 100 keV Ar ion implantations were carried out into porous silicon samples of columnar structure. Samples of different porosities were irradiated using a current density of ∼ 6 × 1012 ions/cm2/s up to a fluence of 10 × 1017 and 10.3 × 1016 ions/cm2, for He+ and Ar+, respectively. The quantity of the retained gas was determined by Rutherford backscattering spectrometry (RBS). It was found that in contrast to the case of compact materials, the gas retention is negligible for the lowest fluence implantations (∼ 5 × 1016 and ∼ 1 × 1015 ions/cm2, for He and Ar respectively). At higher fluences the retention rate gradually increases, approaching the rate of full retention. For He implantation the retention behaviour shows a strong porosity dependence. The above phenomenon is accompanied by the densification of the material as it was observed by scanning electron microscope on the fractured samples and also indicated by the gradual depression of the whole implanted area according to surface profiler measurements. The densification grows until the whole implanted layer (from the surface to the implanted range) almost completely transforms into compact material. Possible mechanisms responsible for the above phenomena are also discussed.",
author = "F. P{\'a}szti and A. Manuaba and E. Szil{\'a}gyi and E. V{\'a}zsonyi and Z. V{\'e}rtesy",
year = "1996",
month = "9",
doi = "10.1016/0168-583X(96)00302-3",
language = "English",
volume = "117",
pages = "253--259",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "3",

}

TY - JOUR

T1 - Densification and noble gas retention of ion-implanted porous silicon

AU - Pászti, F.

AU - Manuaba, A.

AU - Szilágyi, E.

AU - Vázsonyi, E.

AU - Vértesy, Z.

PY - 1996/9

Y1 - 1996/9

N2 - To investigate the gas retention behaviour of porous materials, 500 keV He and 100 keV Ar ion implantations were carried out into porous silicon samples of columnar structure. Samples of different porosities were irradiated using a current density of ∼ 6 × 1012 ions/cm2/s up to a fluence of 10 × 1017 and 10.3 × 1016 ions/cm2, for He+ and Ar+, respectively. The quantity of the retained gas was determined by Rutherford backscattering spectrometry (RBS). It was found that in contrast to the case of compact materials, the gas retention is negligible for the lowest fluence implantations (∼ 5 × 1016 and ∼ 1 × 1015 ions/cm2, for He and Ar respectively). At higher fluences the retention rate gradually increases, approaching the rate of full retention. For He implantation the retention behaviour shows a strong porosity dependence. The above phenomenon is accompanied by the densification of the material as it was observed by scanning electron microscope on the fractured samples and also indicated by the gradual depression of the whole implanted area according to surface profiler measurements. The densification grows until the whole implanted layer (from the surface to the implanted range) almost completely transforms into compact material. Possible mechanisms responsible for the above phenomena are also discussed.

AB - To investigate the gas retention behaviour of porous materials, 500 keV He and 100 keV Ar ion implantations were carried out into porous silicon samples of columnar structure. Samples of different porosities were irradiated using a current density of ∼ 6 × 1012 ions/cm2/s up to a fluence of 10 × 1017 and 10.3 × 1016 ions/cm2, for He+ and Ar+, respectively. The quantity of the retained gas was determined by Rutherford backscattering spectrometry (RBS). It was found that in contrast to the case of compact materials, the gas retention is negligible for the lowest fluence implantations (∼ 5 × 1016 and ∼ 1 × 1015 ions/cm2, for He and Ar respectively). At higher fluences the retention rate gradually increases, approaching the rate of full retention. For He implantation the retention behaviour shows a strong porosity dependence. The above phenomenon is accompanied by the densification of the material as it was observed by scanning electron microscope on the fractured samples and also indicated by the gradual depression of the whole implanted area according to surface profiler measurements. The densification grows until the whole implanted layer (from the surface to the implanted range) almost completely transforms into compact material. Possible mechanisms responsible for the above phenomena are also discussed.

UR - http://www.scopus.com/inward/record.url?scp=0030247537&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030247537&partnerID=8YFLogxK

U2 - 10.1016/0168-583X(96)00302-3

DO - 10.1016/0168-583X(96)00302-3

M3 - Article

AN - SCOPUS:0030247537

VL - 117

SP - 253

EP - 259

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 3

ER -