Defects introduced by electron-irradiation at low temperatures in SiC

N. T. Son, J. Isoya, N. Morishita, T. Ohshima, H. Itoh, A. Gali, E. Janzén

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Defects introduced by electron irradiation at ∼80-100 K in 3C-, 4H- and 6H-SiC were studied by electron paramagnetic resonance (EPR). A number of EPR spectra, labelled LE1-10, were detected. Combining EPR and supercell calculations, we will show that the LE1 center in 3C-SiC with C2v symmetry and an electron spin S=3/2 is related to the (VSi-Si i)3+ Frenkel pair between the silicon vacancy and a second neighbour Sii interstitial along the direction. Results on other centers, possibly also related to interstitials, are discussed.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages377-380
Number of pages4
Volume615 617
DOIs
Publication statusPublished - 2009
Event7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008 - Barcelona, Spain
Duration: Sep 7 2008Sep 11 2008

Publication series

NameMaterials Science Forum
Volume615 617
ISSN (Print)02555476

Other

Other7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008
CountrySpain
CityBarcelona
Period9/7/089/11/08

Fingerprint

Electron irradiation
electron irradiation
Paramagnetic resonance
electron paramagnetic resonance
Defects
defects
interstitials
Silicon
electron spin
Temperature
Vacancies
Electrons
symmetry
silicon

Keywords

  • Electron irradiation
  • EPR
  • Frenkel pair
  • Intrinsic defects
  • Supercell calculations

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Son, N. T., Isoya, J., Morishita, N., Ohshima, T., Itoh, H., Gali, A., & Janzén, E. (2009). Defects introduced by electron-irradiation at low temperatures in SiC. In Materials Science Forum (Vol. 615 617, pp. 377-380). (Materials Science Forum; Vol. 615 617). https://doi.org/10.4028/www.scientific.net/MSF.615-617.377

Defects introduced by electron-irradiation at low temperatures in SiC. / Son, N. T.; Isoya, J.; Morishita, N.; Ohshima, T.; Itoh, H.; Gali, A.; Janzén, E.

Materials Science Forum. Vol. 615 617 2009. p. 377-380 (Materials Science Forum; Vol. 615 617).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Son, NT, Isoya, J, Morishita, N, Ohshima, T, Itoh, H, Gali, A & Janzén, E 2009, Defects introduced by electron-irradiation at low temperatures in SiC. in Materials Science Forum. vol. 615 617, Materials Science Forum, vol. 615 617, pp. 377-380, 7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008, Barcelona, Spain, 9/7/08. https://doi.org/10.4028/www.scientific.net/MSF.615-617.377
Son NT, Isoya J, Morishita N, Ohshima T, Itoh H, Gali A et al. Defects introduced by electron-irradiation at low temperatures in SiC. In Materials Science Forum. Vol. 615 617. 2009. p. 377-380. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.615-617.377
Son, N. T. ; Isoya, J. ; Morishita, N. ; Ohshima, T. ; Itoh, H. ; Gali, A. ; Janzén, E. / Defects introduced by electron-irradiation at low temperatures in SiC. Materials Science Forum. Vol. 615 617 2009. pp. 377-380 (Materials Science Forum).
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