Defects in SiC

E. Janzén, I. G. Ivanov, N. T. Son, B. Magnusson, Z. Zolnai, A. Henry, J. P. Bergman, L. Storasta, F. Carlsson

Research output: Contribution to journalConference article

20 Citations (Scopus)

Abstract

Recent results from studies of shallow donors, pseudodonors, and deep level defects in SiC are presented. The selection rules for transitions between the electronic levels of shallow donors in 4H-SiC in the dipole approximation are derived and the ionization energy for the N donor at hexagonal site is determined. Optical and electrical studies of the DI center reveal the pseudodonor nature of this defect. Defects in high-purity semi-insulating (SI) SiC substrates including the carbon vacancy (VC), silicon vacancy (VSi), and (VC-CSi) pair are studied. The annealing behavior of these defects and their role in carrier compensation in SI 4H-SiC are discussed.

Original languageEnglish
Pages (from-to)15-24
Number of pages10
JournalPhysica B: Condensed Matter
Volume340-342
DOIs
Publication statusPublished - Dec 31 2003
EventProceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark
Duration: Jul 28 2003Aug 1 2003

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Keywords

  • Intrinsic defect
  • Pseudodonor
  • Semi-insulating
  • Shallow donor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Janzén, E., Ivanov, I. G., Son, N. T., Magnusson, B., Zolnai, Z., Henry, A., Bergman, J. P., Storasta, L., & Carlsson, F. (2003). Defects in SiC. Physica B: Condensed Matter, 340-342, 15-24. https://doi.org/10.1016/j.physb.2003.09.001