Defects in Semi-Insulating SiC Substrates

N. T. Son, B. Magnusson, Z. Zolnai, A. Ellison, E. Janzén

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electron paramagnetic resonance (EPR) was used to study defects in semi-insulating (SI) SiC substrates grown by high-temperature chemical vapour deposition (HTCVD) and physical vapour transport (PVT). The C vacancy, Si antisite and several other EPR centers, labelled SI-1 to SI-8, were observed in the HTCVD and/or PVT 4H-SiC substrates. Photo-EPR has revealed several deep levels responsible for the SI properties in different types of SI 4H-SiC. Annealing behaviour of the defects and the stability of the SI properties with high temperature annealing were also studied.

Original languageEnglish
Title of host publicationMaterials Science Forum
EditorsPeder Bergman, Erik Janzén
PublisherTrans Tech Publications Ltd
Pages45-50
Number of pages6
ISBN (Print)9780878499205
DOIs
Publication statusPublished - Jan 1 2003
EventProceedings of the 4th European Conference on Silicon Carbide and Related Materials - Linkoping, Sweden
Duration: Sep 2 2002Sep 5 2002

Publication series

NameMaterials Science Forum
Volume433-436
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

ConferenceProceedings of the 4th European Conference on Silicon Carbide and Related Materials
CountrySweden
CityLinkoping
Period9/2/029/5/02

Keywords

  • Impurities
  • Intrinsic Defects
  • Magnetic Resonance
  • Resistivity
  • Semi-Insulating
  • Thermal Annealing

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Son, N. T., Magnusson, B., Zolnai, Z., Ellison, A., & Janzén, E. (2003). Defects in Semi-Insulating SiC Substrates. In P. Bergman, & E. Janzén (Eds.), Materials Science Forum (pp. 45-50). (Materials Science Forum; Vol. 433-436). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/msf.433-436.45