Defects in Semi-Insulating SiC Substrates

N. T. Son, B. Magnusson, Z. Zolnai, A. Ellison, E. Janzén

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Electron paramagnetic resonance (EPR) was used to study defects in semi-insulating (SI) SiC substrates grown by high-temperature chemical vapour deposition (HTCVD) and physical vapour transport (PVT). The C vacancy, Si antisite and several other EPR centers, labelled SI-1 to SI-8, were observed in the HTCVD and/or PVT 4H-SiC substrates. Photo-EPR has revealed several deep levels responsible for the SI properties in different types of SI 4H-SiC. Annealing behaviour of the defects and the stability of the SI properties with high temperature annealing were also studied.

Original languageEnglish
Pages (from-to)45-50
Number of pages6
JournalMaterials Science Forum
Volume433-436
Publication statusPublished - 2003

Fingerprint

Paramagnetic resonance
electron paramagnetic resonance
Defects
Chemical vapor deposition
defects
Substrates
Vapors
vapor deposition
Annealing
vapors
annealing
Temperature
Vacancies

Keywords

  • Impurities
  • Intrinsic Defects
  • Magnetic Resonance
  • Resistivity
  • Semi-Insulating
  • Thermal Annealing

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Son, N. T., Magnusson, B., Zolnai, Z., Ellison, A., & Janzén, E. (2003). Defects in Semi-Insulating SiC Substrates. Materials Science Forum, 433-436, 45-50.

Defects in Semi-Insulating SiC Substrates. / Son, N. T.; Magnusson, B.; Zolnai, Z.; Ellison, A.; Janzén, E.

In: Materials Science Forum, Vol. 433-436, 2003, p. 45-50.

Research output: Contribution to journalArticle

Son, NT, Magnusson, B, Zolnai, Z, Ellison, A & Janzén, E 2003, 'Defects in Semi-Insulating SiC Substrates', Materials Science Forum, vol. 433-436, pp. 45-50.
Son NT, Magnusson B, Zolnai Z, Ellison A, Janzén E. Defects in Semi-Insulating SiC Substrates. Materials Science Forum. 2003;433-436:45-50.
Son, N. T. ; Magnusson, B. ; Zolnai, Z. ; Ellison, A. ; Janzén, E. / Defects in Semi-Insulating SiC Substrates. In: Materials Science Forum. 2003 ; Vol. 433-436. pp. 45-50.
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