Defects in high-purity semi-insulating SiC

N. T. Son, B. Magnusson, Z. Zolnai, A. Ellison, E. Janzén

Research output: Contribution to journalConference article

64 Citations (Scopus)

Abstract

Defects and impurities in high-purity semi-insulating (HPSI) SiC substrates grown by high temperature chemical vapour deposition (HTCVD) and physical vapour transport (PVT) are studied using electron paramagnetic resonance (EPR) and photoluminescence (PL). The carbon vacancy in the positive charge state (VC+) is observed in all HTCVD and PVT HPSI substrates. EPR signals of (CSi-VC) pairs are often detected in HPSI samples. The TV2a, which was previously attributed to V Si0, is often observed with different concentrations in HTCVD material. The (+/0) donor level of VC at 1.47 eV above the valence band is suggested to be important for the SI-properties of HPSI 4H-SiC substrates with the activation energies Ea∼1.4-1.5 eV. The SI-5 center may be related to the vacancy pair in the negative charge state (V C-VSi)- and its acceptor level (-1/-2) is in the region ∼1.24-1.51 eV below the conduction band. This center is stable at annealing temperature of 1600°C. After annealing, VC+ and VSi-related signals decrease but can still be observed, whereas the (CSi-VC) pairs completely disappear.

Original languageEnglish
Pages (from-to)437-442
Number of pages6
JournalMaterials Science Forum
Volume457-460
Issue numberI
DOIs
Publication statusPublished - Jan 1 2004
EventProceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, France
Duration: Oct 5 2003Oct 10 2003

Keywords

  • Antisite
  • Carrier compensation
  • Defect
  • EPR
  • Photoluminescence
  • Semi-insulating
  • Vacancy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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