Defects identified in SiC and their implications

M. Bockstedte, A. Marini, A. Gali, O. Pankratov, A. Rubio

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Defect signatures, such as deep level positions, hyperfine parameters, local vibrational modes and optical transitions characterize a defect and enable the identification of defect centers. This identification is a key to an understanding of complex phenomena like the defect kinetics. Albeit density functional theory enabled the identification of several defects and their kinetic properties, a new approach is needed to address the optical excitation of defect. Within a quasiparticle theory and taking into account excitonic effects we analyze the excited states of Vc+.

Original languageEnglish
Pages (from-to)285-290
Number of pages6
JournalMaterials Science Forum
Volume600-603
DOIs
Publication statusPublished - 2009

Fingerprint

Defects
defects
Kinetics
Optical transitions
Photoexcitation
kinetics
optical transition
Excited states
excitation
Density functional theory
vibration mode
signatures
density functional theory

Keywords

  • Excitonic effects
  • Hyperfine tensors
  • Optical excitation
  • Photo-EPR
  • Quasi particles
  • Vacancy-related centers

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Bockstedte, M., Marini, A., Gali, A., Pankratov, O., & Rubio, A. (2009). Defects identified in SiC and their implications. Materials Science Forum, 600-603, 285-290. https://doi.org/10.4028/3-908453-11-9

Defects identified in SiC and their implications. / Bockstedte, M.; Marini, A.; Gali, A.; Pankratov, O.; Rubio, A.

In: Materials Science Forum, Vol. 600-603, 2009, p. 285-290.

Research output: Contribution to journalArticle

Bockstedte, M, Marini, A, Gali, A, Pankratov, O & Rubio, A 2009, 'Defects identified in SiC and their implications', Materials Science Forum, vol. 600-603, pp. 285-290. https://doi.org/10.4028/3-908453-11-9
Bockstedte, M. ; Marini, A. ; Gali, A. ; Pankratov, O. ; Rubio, A. / Defects identified in SiC and their implications. In: Materials Science Forum. 2009 ; Vol. 600-603. pp. 285-290.
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