Defect-related current instabilities in InAs/GaAs and AlGaAs/GaAs structures?

Z. J. Horváth, S. Franchi, A. Bosacchi, P. Frigeri, E. Gombia, R. Mosca, V. V. Tuyen

Research output: Contribution to journalConference article

4 Citations (Scopus)


Unexpected excess current was obtained in GaAs/InAs quantum dot structures at low temperatures and low current levels. This excess current exhibited instabilities with changing the bias, and over the time. It has been concluded that the excess current is a minority injection current connected with recombination through defects originated from the formation of QDs. The instabilities are connected with unstable occupation of energy levels induced by the above defects, which depend on temperature and on the current level. Excess currents have also been obtained in annealed AlGaAs/GaAs structures. These excess currents exhibited memory effect, which was probably connected with formatin of defects during annealing.

Original languageEnglish
Pages (from-to)565-568
Number of pages4
JournalSolid State Phenomena
Publication statusPublished - Jan 1 2002
EventGettering and Defect Engineering in Semiconductor Technology 2001 - S. Tecla, Italy
Duration: Sep 30 2001Oct 3 2001



  • Current instability
  • Defects
  • GaAs/AlGaAs
  • GaAs/InAs
  • Minority injection
  • Quantum dots
  • Recombination

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Horváth, Z. J., Franchi, S., Bosacchi, A., Frigeri, P., Gombia, E., Mosca, R., & Tuyen, V. V. (2002). Defect-related current instabilities in InAs/GaAs and AlGaAs/GaAs structures? Solid State Phenomena, 82-84, 565-568.