Deep p-n junction in Hg1-xCdxTe created by ion milling

E. Belas, P. Hoschi, R. Grill, J. Franc, P. Moravec, K. Lischka, H. Sitter, A. Tóth

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

Thick n-type layers near the surface of p-Hg1-xCdxTe produced as a result of low energy ion milling have been investigated. EBIC measurements of cleaved cross sections show the depth and shape of the p-n junction under the surface of (HgCd)Te. An analysis of the n-type layers by differential Hall effect measurements is reported. It was found that the energy concentration in the n-type layer is of the order of 1015cm-3 and is nearly constant from the surface to the p-n junction. A diminishing density of etch pits was found on the surfaces influenced by ion milling. A model for p-n conversion during ion milling is discussed.

Original languageEnglish
Pages (from-to)1695-1699
Number of pages5
JournalSemiconductor Science and Technology
Volume8
Issue number9
DOIs
Publication statusPublished - Sep 1993

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p-n junctions
Ions
ions
Hall effect
energy
cross sections

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Belas, E., Hoschi, P., Grill, R., Franc, J., Moravec, P., Lischka, K., ... Tóth, A. (1993). Deep p-n junction in Hg1-xCdxTe created by ion milling. Semiconductor Science and Technology, 8(9), 1695-1699. https://doi.org/10.1088/0268-1242/8/9/003

Deep p-n junction in Hg1-xCdxTe created by ion milling. / Belas, E.; Hoschi, P.; Grill, R.; Franc, J.; Moravec, P.; Lischka, K.; Sitter, H.; Tóth, A.

In: Semiconductor Science and Technology, Vol. 8, No. 9, 09.1993, p. 1695-1699.

Research output: Contribution to journalArticle

Belas, E, Hoschi, P, Grill, R, Franc, J, Moravec, P, Lischka, K, Sitter, H & Tóth, A 1993, 'Deep p-n junction in Hg1-xCdxTe created by ion milling', Semiconductor Science and Technology, vol. 8, no. 9, pp. 1695-1699. https://doi.org/10.1088/0268-1242/8/9/003
Belas E, Hoschi P, Grill R, Franc J, Moravec P, Lischka K et al. Deep p-n junction in Hg1-xCdxTe created by ion milling. Semiconductor Science and Technology. 1993 Sep;8(9):1695-1699. https://doi.org/10.1088/0268-1242/8/9/003
Belas, E. ; Hoschi, P. ; Grill, R. ; Franc, J. ; Moravec, P. ; Lischka, K. ; Sitter, H. ; Tóth, A. / Deep p-n junction in Hg1-xCdxTe created by ion milling. In: Semiconductor Science and Technology. 1993 ; Vol. 8, No. 9. pp. 1695-1699.
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